Related papers: Analytical solutions for the interstitial diffusio…
We discuss restrictions on the existence of the diffusion pole in the translationally invariant diagrammatic treatment of disordered electron systems. We use the Bethe-Salpeter equations for the two-particle vertex in the electron-hole and…
We reveal the microscopic self-diffusion process of compact tri-interstitials in silicon using a combination of molecular dynamics and nudged elastic band methods. We find that the compact tri-interstitial moves by a collective…
First-principles atomistic molecular dynamics simulation in the micro-canonical and canonical ensembles has been used to study the diffusion of interstitial hydrogen in $\alpha$-iron. Hydrogen to Iron ratios between $\theta=1/16 and 1/2…
In this paper we present a mathematical model for the electrochemical deposition aimed at the production of inverse opals. The real system consists of an arrangement of sub micrometer spheres, through which the species in an electrolytic…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
Comparative studies of the resonant transmission of light in the vicinity of exciton resonances, measured for 15 few-micron GaAs crystal slabs with different impurity concentrations $N$, reveal an unexpected tendency. While $N$ spans almost…
In light of recent proposals to realize a topological superconductor on the surface of strong topological insulators, we study impurity and vortex scattering in two dimensional topological superconductivity. We develop a theory of…
The bonding properties of tilt boundary in poly-silicon and the effect of interstitial impurities are investigated by first-principles. In order to obtain thorough information on the nature of chemical bondings in these solid systems, an…
We develop a self-consistent theory describing the spin and spatial electron diffusion in the impurity band of doped semiconductors under the effect of a weak spin-orbit coupling. The resulting low-temperature spin-relaxation time and…
While the diffusion of hydrogen on silicon surfaces has been relatively well characterised both experimentally and theoretically, the diffusion around corners between surfaces, as will be found on nanowires and nanostructures, has not been…
We use new equations for the interstitial impurity diffusion fluxes under strain to study impurity atom redistribution in the vicinity of dislocations. Two levels of simulation are applied. The first one is evaluation of coefficients that…
Atomistic computer simulations are applied to investigate the atomic structure, thermal stability, and diffusion processes in Al-Si interphase boundaries as a prototype of metal-ceramic interfaces in composite materials. Some of the most…
The diffusion path and diffusivity of oxygen in crystalline silicon are computed using an empirical interatomic potential which was recently developed for modelling the interactions between oxygen and silicon atoms. The diffusion path is…
The family of multi-layered superconductors derived from the doped topological insulator Bi$_2$Se$_3$ has been found to be unusually robust against non-magnetic disorder. Recent experimental studies have highlighted the fact that the…
Diffusion in a two-phase system is a classical problem discussed in the literature. The general solution of the one-dimensional case to this problem is revisited and a detailed derivation is proposed. The solution is discussed in…
The prevailing view that solid-state diffusion is negligible at low temperatures is challenged by rapid sulfur and barium isotope exchange between natural barite crystals and aqueous solutions in laboratory experiments. This assumption…
In pseudo integrable systems diffractive scattering caused by wedges and impurities can be described within the framework of Geometric Theory of Diffraction (GDT) in a way similar to the one used in the Periodic Orbit Theory of Diffraction…
Three types of BaTiO3 core - amorphous nano-shell composite ceramics were processed from the same core-shell powder by standard sintering, spark-plasma sintering and two-step sintering techniques and characterized by XRD, HRSEM and…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
Control of dopants in silicon remains the most important approach to tailoring the properties of electronic materials for integrated circuits, with Group V impurities the most important n-type dopants. At the same time, silicon is finding…