Related papers: Coercive fields in ultrathin BaTiO3 capacitors
The miniaturization of electronic devices has led to the prominence, in technological applications, of semiconductor thin films that are only a few nanometers thick. In spite of intense research, the thickness-dependent resistivity or…
The coercive field and angular dependence of the coercive field of single-grain Nd$_{2}$Fe$_{14}$B permanent magnets are computed using finite element micromagnetics. It is shown that the thickness of surface defects plays a critical role…
We calculate the number and energy densities of a quasi-2D Bose-Einstein gas constrained within a thin region of infinite extent but of finite width d. The BEC critical transition temperature then becomes an explicit function of d. We use…
For the first time, the dielectric response of a BaTiO3 thin film under an AC electric field is investigated using time-resolved X-ray absorption spectroscopy at the Ti K-edge to clarify correlated contributions of each constituent atom on…
An excitonic insulator (EI) phase is a consequence of collective many-body effects where an optical band gap is formed by the condensation of electron-hole pairs or excitons. We report pressure-dependent optical pump optical probe…
We present measurements of the frequency and electric field dependent conductivity of single walled carbon nanotube(SWCNT) networks of various densities. The ac conductivity as a function of frequency is consistent with the extended pair…
The electronic and magnetic properties in ABO3 perovskite oxides are extremely sensitive to lattice structure but also the dimensionality, such as the thickness in thin film form. Here, we report the thickness-dependent electro-magnetic…
The mechanisms involved in the polarization switching process in soft and hard Pb(Zr53, Ti47)O3 (PZT) bulk ceramics were investigated through the dependency of the hysteresis loop on the frequency. In order to determine the influence of the…
We simulate from first-principles the energetic, structural, and electronic properties of ferroelectric domains in ultrathin capacitors made of a few unit cells of BaTiO$_3$ between two metallic SrRuO$_3$ electrodes in short circuit. The…
Superconductivity has been observed in doped SrTiO$_3$ at charge-carrier densities below 10$^{18}$ cm$^{-3}$, where the density of states at the Fermi level of the itinerant electrons is several orders of magnitude lower than that of…
Scanning tunneling microscopy and spectroscopy have been used to investigate the femtosecond dynamics of Dirac fermions in the topological insulator Bi$_2$Se$_3$ ultrathin films. At two-dimensional limit, bulk electrons becomes quantized…
Perovskite ferroelectric oxides are usually considered to be brittle materials, however, recent work [Dong et al., Science 366, 475 (2019)] demonstrated the super-elasticity in the freestanding BaTiO3 thin films. This property may originate…
Processes occurring in the strong-field regime of QED are characterized by background electromagnetic fields of the order of the critical field $F_{cr}=m^2c^3/\hbar|e|$ in the rest frame of participating charges. It has been conjectured…
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic…
Recent experimental advances highlight electron charge qubits floating above solid neon as an emerging promising platform for quantum computing, but the physical origin of single-electron lateral trapping is still not fully understood.…
Electric field dependent mechanical properties of relaxor ferroelectric material Pb(Mn1/3Nb2/3)O3-PbTiO3 are investigated with the nanoindentation technique. Giant electric-field-tunable apparent elastic modulus (up to -39%), hardness (-9%…
Interfaces at the two-dimensional limit in oxide materials exhibit a rich span of functionality that differs significantly from the bulk behavior. Among such interfaces, domain walls in ferroelectrics draw special attention because they can…
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate…
The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of…
Ultra-thin 3D topological insulators provide a stage to study the surface physics of such materials by minimizing the bulk contribution. Further, the experimentally verified snowflake like structure of the Fermi surface leads to a hexagonal…