Related papers: Multivalued memory effects in electronic phase-cha…
Hexagonal manganites are multiferroic materials with two highly-dissimilar phase transitions: a ferroelectric transition (from P63/mmc to P63cm) at a temperature higher than 1000 K and an antiferromagnetic transition at TN=65 - 130 K.…
Lithium-ion batteries rely on particulate porous electrodes to realize high performance, especially the fast-charging capability. To minimize the particle-wise reaction heterogeneities that may lead to local hot spots, deeper understandings…
We have investigated the specific heat and resistivity of a single crystal of Pr_{0.63}Ca_{0.37}MnO_3 around the charge ordering (CO) transition temperature, T_{CO}, in the presence of high magnetic fields (<=12T) which can melt the charge…
We have studied the effect of irreversibility induced by repeated thermal cycles on the electric transport and magnetization of polycrystalline samples of La0.5Ca0.5MnO3 and La0.325Pr0.3Ca0.375MnO3. An increase of the resistivity and a…
Magnetic nanomaterials record information as fast as picoseconds in computer memories but retain it for millions of years in ancient rocks. This exceedingly broad range of times is covered by hopping over a potential energy barrier through…
Vanadium dioxide (VO2) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO2 memory devices have essentially been volatile at room…
Neutron diffraction and nuclear quadrupole resonance (NQR) measurements were employed to investigate magnetic order in the non-ferroelectric phase preceding the low-temperature multiferroic state in FeTe2O5Br. Refnement of the neutron…
Two-dimensional (2D) materials enable new types of magnetic and electronic phases mediated by their reduced dimensionality like magic-angle induced phase transitions, 2D Ising antiferromagnets and ferromagnetism in 2D atomic layers and…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…
A comparative study of magnetic behavior in a DC magnetic field up to 19 Tesla has been undertaken on different Nb3Sn samples, i.e. single crystals, polycrystal samples and multifilamentary wires. From the 1st and 3rd harmonics of the AC…
Recent progress on caloric effects are reviewed. The application of external stimuli such as magnetic field, hydrostatic pressure, uniaxial stress and electric field give rise respectively to magnetocaloric, barocaloric, elastocaloric and…
La(Fe$_x$Si$_{1-x}$)$_{13}$ and derived quaternary compounds are well-known for their giant, tunable, magneto- and barocaloric responses around a first-order paramagnetic-ferromagnetic transition near room temperature with low hysteresis.…
We examine metastable and transient effects both above and below the first-order decoupling line in a 3D simulation of magnetically interacting pancake vortices. We observe pronounced transient and history effects as well as supercooling…
The effect of low magnetic fields on the transport properties of a manganite compound with magnetic phase separation is studied. The different behavior obtained in samples of La0.5Ca0.5MnO3 related to the way in which the low field is…
Recently the inverse magnetocaloric effect is observed for different compounds. However there is very rare for any manifestation of the effect to be seen in manganites. We have found inverse magnetocaloric effect in the case of…
Nonlinear devices, such as transistors, enable contemporary computing technologies. We theoretically investigate nonlinear effects, bearing a high fundamental scientific and technical relevance, in magnonics with emphasis on…
The unusual electronic and magnetic properties of the systems Ce$_3$Pd$_{20}$T$_6$ (T = Ge, Si) with two non-equivalent Ce positions are discussed. The logarithmic growth of resistance for both the systems confirms the presence of the Kondo…
We report an isothermal electric field-induced first-order phase transition from Mott-insulator to the metallic state in the epitaxial thin film of V$_2$O$_3$ in the temperature regime below its Mott transition temperature $\approx$ 180 K.…
We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…