Related papers: Space Charge Effects in Ferroelectric Thin Films
It is generally accepted that oxygen vacancies play a central role in the emergence of ferroelectricity for HfO2-based materials, but the underlying mechanism still remains elusive. Herein, starting from the basic characterization circuit,…
Layered materials with non-centrosymmetric stacking order are attracting increasing interest due to the presence of ferroelectric polarization, which is dictated by weak interlayer hybridization of atomic orbitals. Here, we use density…
We describe ferroelectric thin films with circular electrodes and develop a thermodynamic theory that explains previously mysterious experiments. It is found to be especially useful for restricted geometries such as microstructures for…
The high field charge injection and transport properties in reinforced silicone dielectrics were investigated by measuring the time-dependent space charge distribution and the current under dc conditions up to the breakdown field, and were…
A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…
Epitaxial thin films of relaxor PbMg1/3Nb2/3O3 and PbSc0.5Nb0.5O3, and ferroelectric PbZr0.65Ti0.35O3, Pb0.955La0.045Zr0.65Ti0.35O3, and Ba0.4Sr0.6TiO3 were prepared, and their dielectric properties were studied in a broad range of the…
The ferroelectric properties of disorder Pb(Zr$_{0.5}$Ti$_{0.5}$)O$_{3}$ thin films are investigated with Monte Carlo simulations on the basis of a first-principles-derived Hamitonian. It is found that there exists a critical thickness of…
The subject of space charge in ionization detectors is reviewed, showing how the observations and the formalism used to describe the effects have evolved, starting with applications to calorimeters and reaching recent, large-size time…
The surface charge associated with the spontaneous polarization in ferroelectrics is well known to cause a depolarizing field that can be particularly detrimental in the thin-film geometry desirable for microelectronic devices. Incomplete…
Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains…
Pressure-induced polarization switching in ferroelectric thin films has emerged as a powerful method for domain patterning, allowing to create predefined domain patterns on free surfaces and under thin conductive top electrodes. However,…
Electrically charged systems bound by a strong gravitational force can sustain a huge amount of electric charge (up to 10^20C) against Coulomb repulsion. General relativistically such systems form a stable hydrostatic configuration both in…
We investigate ferroelectric polariation as well as the formation of long-range order and the carrier density distribution in type-II Weyl semimetal WTe$_{2}$ in $T_{d}$ phase. It is been found that the metallicity and ferroelectricity can…
To minimize their electrostatic energy, insulating ferroelectric films tend to break up into nanoscale ``Kittel'' domains of opposite polarization that are separated by uncharged 180$^\circ$ domain walls. Here, I report on self-consistent…
A mechanism of point defect migration triggered by local depolarization fields is shown to explain some still inexplicable features of aging in acceptor doped ferroelectrics. A drift-diffusion model of the coupled charged defect transport…
Experiments on a nearly spin degenerate two-dimensional electron system reveals unusual hysteretic and relaxational transport in the fractional quantum Hall effect regime. The transition between the spin-polarized (with fill fraction $\nu =…
The finite screening length by real metallic electrodes, albeit very small (<1A), results in finite depolarizing field that tends to split the film into domains. In very thin ferroelectric films the domain structure reduces to sinusoidal…
We study the distribution of vacuum polarization charge induced by a Coulomb impurity in massive graphene. By analytically computing the polarization function, we show that the charge density is distributed in space in a non-trivial…
Contact electrification give rise to charge accumulation at the interface when two materials are brought into contact with each other. The charge accumulation at the interface will diffuse to the interior of the conducting material if the…
XY and Heisenberg spins, subjected to strong random fields acting at few points in space with concentration $c_r \ll 1$, are studied numerically on 3d lattices containing over four million sites. Glassy behavior with strong dependence on…