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We investigate the effect of a scanning gate tip in the nonlinear quantum transport properties of nanostructures. Generally, we predict that the symmetry of the current-voltage characteristic in reflection-symmetric samples is broken by a…
We analyze the electronic transport through a quantum dot that contains a magnetic impurity. The coherent transport of electrons is governed by the quantum confinement inside the dot, but is also influenced by the exchange interaction with…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
We study the low-temperature transport properties of the systems of parallel quantum dots described by the N-impurity Anderson model. We calculate the quasiparticle scattering phase shifts, spectral functions and correlations as a function…
We report on measurements of single electron tunneling through a quantum dot using a quantum point contact as non-invasive charge detector with fast time response. We elaborate on the unambiguous identification of individual tunneling…
The conductance of two Anderson impurity models, one with two-fold and another with four-fold degeneracy, representing two types of quantum dots, is calculated using a world-line quantum Monte Carlo (QMC) method. Extrapolation of the…
Systematic theoretical results for the effects of a dilute concentration of magnetic impurities on the thermodynamic and transport properties in the region around the quantum critical point of a ferromagnetic transition are obtained. In the…
The influence of isolated impurity atoms on the electron energy spectrum in a parabolic quantum dot in quantizing magnetic field is studied. The impurity potential is approximated by a Gaussian separable operator which allows one to obtain…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
Quantum impurities exhibit fascinating many-body phenomena when the small interacting impurity changes the physics of a large noninteracting environment. The characterisation of such strongly correlated non-perturbative effects is…
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across…
We explore the full counting statistics of single electron tunneling through a quantum dot using a quantum point contact as non-invasive high bandwidth charge detector. The distribution of counted tunneling events is measured as a function…
We propose a novel mechanism of impurity screening in (1+1)$d$ quantum critical states described by conformal field theories (CFTs). An impurity can be screened if it has the same quantum numbers as some gapless degrees of freedom of the…
A system of electrons in two dimensions and strong magnetic fields can be tuned to create a gapped 2D system with one dimensional channels along the edge. Interactions among these edge modes can lead to independent transport of charge and…
We show that conductance of 1D channel with one point-like impurity critically depends on asymptotic behavior of e-e interaction at small momenta k (about inverse length of a channel). Conductance reemerges (contrary to the case of…
The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open…
Using bosonization and path integral methods, we study general low temperature behavior of non-magnetic and magnetic impurity scattering in Tomonaga-Luttinger liquid, and calculate electron Green function for a general backward scattering…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron…
Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…