Related papers: Multiferroic tunnel junctions
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
Magnetic skyrmions, vortex-like swirling spin textures characterized by a quantized topological invariant, realized in chiral-lattice magnets are currently attracting intense research interest. In particular, their dynamics under external…
The two-dimensional (2D) multiferroic materials have widespread of application prospects in facilitating the integration and miniaturization of nanodevices. However, it is rarely coupling between the magnetic, ferroelectric, and ferrovalley…
Developing new multiferroics at the two-dimensional (2D) limit with energy-efficient magnetoelectric coupling can inform the interplay physics of novel orders and advance on-chip high-performance computing applications. Here we apply…
The coupling between ferroelectric and magnetic orders in multiferroic materials and the nature of magnetoelectric (ME) effects are enduring experimental challenges. In this work, we have studied the response of magnetization to…
Ferroelectric tunnel junctions (FTJ) based on hafnium zirconium oxide (Hf1-xZrxO2; HZO) are a promising candidate for future applications, such as low-power memories and neuromorphic computing. The tunneling electroresistance (TER) is…
Multiferroics, showing simultaneous ordering of electrical and magnetic degrees of freedom, are remarkable materials as seen from both the academic and technological points of view. A prominent mechanism of multiferroicity is the…
Responsiveness to multiple stimuli and adaptivity are paramount for designing smart multifunctional materials. In soft, partially ordered systems, these features can often be achieved via self-assembly, allowing for the combination of…
The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare…
A spin-tunnel-junction based on manganites, with La$_{1-x}$Sr$_x$MnO$_3$ (LSMO) as ferromagnetic metallic electrodes and the undoped parent compound LaMnO$_3$ (LMO) as insulating barrier, is here theoretically discussed using double…
A new spintronic theory has been developed for the magnetic tunnel junction (MTJ) with single-crystal barrier. The barrier will be treated as a diffraction grating with intralayer periodicity, the diffracted waves of tunneling electrons…
The magnetic state of atomically thin semiconducting layered antiferromagnets such as CrI$_3$ and CrCl$_3$ can be probed by forming tunnel barriers and measuring their resistance as a function of magnetic field ($H$) and temperature ($T$).…
In considering a novel function in ferromagnetic tunnel junctions consisting of ferromagnet(FM)/barrier/FM junctions, we theoretically investigate multiple valued (or multi-level) cell property, which is in principle realized by sensing…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Employing many-valued logic (MVL) data processing allows to dramatically increase the performance of computing circuits. Here we propose to employ ferroelectrics for the material implementation of MVL units basing on their ability to pin…
Ferroelectric tunnel junctions (FTJs), which consist of two metal electrodes separated by a thin ferroelectric barrier, have recently aroused significant interest for technological applications as nanoscale resistive switching devices. So…
A key challenge in antiferromagnetic spintronics is the control of spin configuration on nanometer scales applicable to solid-state technologies. Bismuth ferrite (BiFeO3) is a multiferroic material that exhibits both ferroelectricity and…
Understanding quantum tunneling in many-body systems is crucial for advancing quantum technologies and nanoscale device design. Despite extensive studies of quantum tunneling, the role of interactions in determining directional transport…
Ferroic materials enable a multitude of emerging applications, and optimum functional properties are achieved when ferromagnetic and ferroelectric properties are coupled to a first-order ferroelastic transition. In bulk materials, this…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…