Related papers: Single wall carbon nanotube double quantum dot
We propose an experimentally viable setup for the realization of one-dimensional ultracold atom gases in a nanoscale magnetic waveguide formed by single doubly-clamped suspended carbon nanotubes. We show that all common decoherence and atom…
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…
A split gate technique is used to form a lateral quantum dot in a two-dimensional electron gas of a modulation-doped silicon/silicon-germanium heterostructure. e-beam lithography was employed to produce split gates. By applying negative…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and…
We report on correlated real-time detection of individual electrons in an InAs nanowire double quantum dot. Two self-aligned quantum point contacts in an underlying two-dimensional electron gas material serve as highly sensitive charge…
Single-Wall Carbon Nanotubes (SWNTs) are among the very few candidates for single-photon sources operating in the telecom bands since they exhibit large photon antibunching up to room temperature. However, coupling a nanotube to a photonic…
Generalized electrostatic quantum swap gate implemented in the chain of 2 double coupled quantum dots using single electron in semiconductor is presented in tight-binding simplistic model specifying both analytic and numerical results. The…
We have measured the differential conductance dI/dV of individual multi-wall carbon nanotubes (MWNT) of different lengths. A cross-over from wire-like (long tubes) to dot-like (short tubes) behavior is observed. dI/dV is dominated by random…
Quantum dots fabricated using techniques and materials that are compatible with semiconductor manufacturing are promising for quantum information processing. While great progress has been made toward high-fidelity control of quantum dots…
This paper is the first one of a series of two articles in which we revisit the optical properties of single-walled carbon nanotubes (SWNT). Produced by rolling up a graphene sheet, SWNT owe their intriguing properties to their cylindrical…
We present measurements of silicon (Si) metal-oxide-semiconductor (MOS) nanostructures that are fabricated using a process that facilitates essentially arbitrary gate geometries. Stable Coulomb blockade behavior free from the effects of…
Hybrid circuit quantum electrodynamics (QED) involves the study of coherent quantum physics in solid state systems via their interactions with superconducting microwave circuits. Here we present an implementation of a hybrid superconducting…
We report low-temperature transport experiments on single-wall nanotubes with metallic leads of varying contact quality, ranging from weak tunneling to almost perfect transmission. In the weak tunneling regime, where Coulomb blockade…
We present a new scheme for quantum interfaces to accomplish the interconversion of photonic qubits and spin qubits based on optomechanical resonators and the spin-orbit-induced interactions in suspended carbon nanotube quantum dots. This…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods…
We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on…
A double quantum dot is formed in a graphene nanoribbon device using three top gates. These gates independently change the number of electrons on each dot and tune the inter-dot coupling. Transport through excited states is observed in the…
Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…
Single electron transistors (SETs) are fabricated by placing single walled carbon nanotubes (SWNTs) on a 100 nm wide local Al/Al2O3 bottom gate and then contacting with Pd electrodes. Coulomb oscillations up to 125 K were observed and…
The fabrication of metallic single-walled carbon nanotube electrodes separated by gaps of typically 20nm width by electron-beam-induced oxidation is studied within an active device configuration. The tube conductance is measured…