Related papers: Quantized conductance in an AlAs 2D electron syste…
We studied ballistic transport across a quantum point contact (QPC) defined in a high-quality, GaAs (311)A two-dimensional (2D) hole system using shallow etching and top-gating. The QPC conductance exhibits up to 11 quantized plateaus. The…
Quantum point contact or QPC -- a constriction in a semiconducting two-dimensional (2D) electron system with a quantized conductance -- has been found as the building block of novel spintronic, and topological electronic circuits. They can…
Strong spin-orbit coupling, the resulting large $g$ factor, and small effective mass make InAs an attractive material platform for inducing topological superconductivity. The surface Fermi level pinning in the conduction band enables highly…
Quantum point contact devices are indispensable tools for probing the edge structure of the fractional quantum Hall (FQH) states. Recent observations of quantized conductance plateaus accompanied by shot noise in such devices, as well as…
Recent theories suggest that the excitations of certain quantum Hall states may have exotic braiding statistics which could be used to build topological quantum gates. This has prompted an experimental push to study such states using…
The appearance and evolution of an anomalous conductance plateau at 0.4 (in units of 2e2/h) in an In0.52Al0.48As/InAs quantum point contact (QPC), in the presence of lateral spin-orbit coupling, has been studied at T=4.2K as a function of…
We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed…
The prospect of coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting…
We report an experimental study of quantum point contacts defined in a high-quality strained germanium quantum well with layered electric gates. At zero magnetic field, we observe quantized conductance plateaus in units of 2$e^2/h$.…
We report on the fabrication and electronic transport characterisation of Schottky-gated strongly confined Si/SiGe quantum point contacts (QPC). At zero magnetic field and T=450mK the QPC conductance as a function of gate voltage shows a…
On the basis of the Chalker-Coddington network model, a numerical and analytical study is made of the statistics of point-contact conductances for systems in the integer quantum Hall regime. In the Hall plateau region the point-contact…
The $\nu = 2/3$ fractional quantum Hall state is the hole-conjugate state to the primary Laughlin $\nu = 1/3$ state. We investigate transmission of edge states through quantum point contacts fabricated on a GaAs/AlGaAs heterostructure…
The integer quantized conductance of one-dimensional electron systems is a well understood effect of quantum confinement. A number of fractionally quantized plateaus are also commonly observed. They are attributed to many-body effects, but…
We model the 2-probe conductance of a quantum point contact (QPC), in linear response. If the QPC is highly non-adiabatic or near to scatterers in the open reservoir regions, then the usual distinction between leads and reservoirs breaks…
Here, we employ a numerical approach to investigate the transport and conductance characteristics of a quantum point contact. A quantum point contact is a narrow constriction of a width comparable to the electron wavelength defined in a…
We present new results of the ``0.7'' 2(e^2)/h structure or quasi plateau in some of the most strongly confined point contacts so far reported. This strong confinement is obtained by a combination of shallow etching and metal gate…
Apart from usual quantization steps on the ballistic conductance of a quasi-one-dimensional conductor, an additional plateau-like feature appears at a fraction of about 0.7 below the first conductance step in GaAs-based quantum point…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…
One of the hallmark experiments of quantum transport is the observation of the quantized resistance in a point contact formed with split gates in GaAs/AlGaAs heterostructures. Being carried out on a single material, they represent in an…