Related papers: Light emitting single electron transistors
A large area field emitter (LAFE) typically consists of several thousands of nanoscale emitting tips. These are difficult to simulate using purely numerical methods based on finite/boundary element or finite difference methods. We show here…
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…
We derive the statistics of scattered photons from a $\Lambda$- or ladder-type three-level emitter (3LE) embedded in a 1D open waveguide. The weak probe photons in the waveguide are coupled to one of the two allowed transitions of the 3LE,…
A detailed analysis of the electro-optical response of single as well as coupled semiconductor quantum dots is presented. This is based on a realistic ---i.e., fully tridimensional--- description of Coulomb-correlated few-electron states,…
Optical detection and spectroscopy of single molecules has become an indispensable tool in biological imaging and sensing. Its success is based on fluorescence of organic dye molecules under carefully engineered laser illumination. In this…
We study electron transport through a quantum interferometer with side-coupled quantum dots. The interferometer, threaded by a magnetic flux $\phi$, is attached symmetrically to two semi-infinite one-dimensional metallic electrodes. The…
In our work, we have engineered low capacitance single quantum dot photodiodes as sensor devices for the optoelectronic sampling of ultrafast electric signals. By the Stark effect, a time-dependent electric signal is converted into a…
Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…
We report electronic transport on n-type silicon Single Electron Transistors (SETs) fabricated in Complementary Metal Oxide Semiconductor (CMOS) technology. The n-MOSSETs are built within a pre-industrial Fully Depleted Silicon On Insulator…
Using a Green's function formalism we derive analytical expressions for the electronic transmittance through a benzene ring. To motivate the approach we first solve the resonant level system and then extend the method to the benzene case.…
We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we…
Because of their strong excitonic photoluminescence (PL) and electroluminescence (EL), together with an excellent electronic tunability, transition metal dichalcogenide (TMD) semiconductors are promising candidates for novel optoelectronic…
The composition of dark matter is one of the puzzling topics in astrophysics. To address this issue, several experiments searching for the existence of axions have been designed, built and realized in the last twenty years. Among all the…
We have suspended an Al based single-electron transistor whose island can resonate freely between the source and drain leads forming the clamps. In addition to the regular side gate, a bottom gate with a larger capacitance to the SET island…
Since the initial development of one-dimensional electron gases (1DEG) two decades ago, there has been intense interest in both the fundamental physics and the potential applications, including quantum computation, of these quantum…
We investigate the intensity correlation properties of single photons emitted from an optically excited single semiconductor quantum dot. The second order temporal coherence function of the photons emitted at various wavelengths is measured…
Pulsed electrostatic gating combined with capacitive charge sensing is used to perform excited state spectroscopy of an electrically isolated double-quantum-dot system. The tunneling rate of a single charge moving between the two dots is…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…
Electronic structure and transport characteristics of coupled CdS and ZnSe quantum dots are studied using density functional theory and non equilibrium Greens function method respectively. Our investigations show that in these novel coupled…