Related papers: Dependence of persistent gaps at Landau level cros…
The longitudinal resistivity at transitions between integer quantum Hall states in two-dimensional electrons confined to AlAs quantum wells is found to depend on the spin orientation of the partially-filled Landau level in which the Fermi…
The tilting angular dependence of the energy gap was measured in the bilayer quantum Hall state at the Landau level filling $\nu=1$ by changing the density imbalance between the two layers. The observed gap behavior shows a continuous…
We report tilted-field transport measurements in the quantum-Hall regime in an InAs/In_0.75Ga_0.25As/In_0.75Al_0.25As quantum well. We observe anti-crossings of spin-split Landau levels, which suggest a mixing of spin states at Landau level…
The electronic structure of InAs/AlSb/GaSb quantum wells embedded in AlSb barriers and in the presence of a perpendicular magnetic field is studied theoretically within the $14$-band ${\bf k}\cdot{\bf p}$ approach without making the axial…
In two-dimensional hole systems confined to wide GaAs quantum wells, where the heavy- and light- hole states are close in energy, we observe a very unusual crossing of the lowest two Landau levels as the sample is tilted in magnetic field.…
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two $N=0$ Landau levels of these subbands and with opposite spins. Near the…
A quantum Hall system which is divided into two laterally coupled subsystems by means of a tunneling barrier exhibits a complex Landau level dispersion. Magnetotunneling spectroscopy is employed to investigate the small energy gaps which…
We study effects of tilted magnetic fields on energy levels in a double-quantum-well (DQW) system, focusing on the coupling of subbands and Landau levels (LLs). The subband-LL coupling induces anticrossings between LLs, manifested directly…
The Coulomb gap observed in tunneling between parallel two-dimensional electron systems, each at half filling of the lowest Landau level, is found to depend sensitively on the presence of an in-plane magnetic field. Especially at low…
In a low-disorder two-dimensional electron system, when two Landau levels of opposite spin or pseudospin cross at the Fermi level, the dominance of the exchange energy can lead to a ferromagnetic, quantum Hall ground state whose gap is…
We present magnetotransport measurements of a strongly hybridized inverted InAs/GaSb double quantum well. We find that the spin-orbit interaction leads to an appreciable spin-splitting of hole-like states, which form distinct Landau levels…
We present here the results from a density dependent study of the activation energy gaps of the fractional quantum Hall effect states at Landau level fillings \nu=8/3 and 7/3 in a series of high quality quantum wells. In the density range…
In a two-subband GaAs/AlGaAs two-dimensional electron system, the phase diagram of longitudinal resistivity \rho_xx in density and magnetic field plane exhibits an intriguing structure centered at filling factor \nu = 4 which is strikingly…
Two laterally adjacent quantum Hall systems separated by an extended barrier of a thickness on the order of the magnetic length possess a complex Landau band structure in the vicinity of the line junction. The energy dispersion is obtained…
I review some aspects of an alternative model of the quantum Hall effect, which is not based on the presence of disorder potentials. Instead, a quantization of the electronic drift current in the presence of crossed electric and magnetic…
The survival of the quantum spin Hall edge channels in presence of an external magnetic field has been a subject of experimental and theoretical research. The inversion of Landau levels that accommodates the quantum spin Hall effect is…
First-order phase transitions produce abrupt changes to the character of both ground and excited electronic states. Here we conduct electronic compressibility measurements to map the spin phase diagram and Landau level (LL) energies of…
We have realized an AlAs two-dimensional electron system in which electrons occupy conduction-band valleys with different Fermi contours and effective masses. In the quantum Hall regime, we observe both resistivity spikes and persistent…
We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…
We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at \nu=7/2 in the second Landau level. We…