Related papers: Direct electronic measurement of the spin Hall eff…
We demonstrate theoretically that a coherent manipulation of electron spins in low-dimensional semiconductor structures with spin-orbit coupling by infrared radiation is possible. The proposed approach is based on using a dipole force…
Spin Hall effects interconvert spin- and charge currents due to spin-orbit interaction, which enables convenient electrical generation and detection of diffusive spin currents and even collective spin excitations in magnetic solids. Here,…
Spintronics is an analogue to electronics where spin of the electron rather than its charge is functionally controlled for devices. The generation and detection of spin current without ferromagnetic or exotic/scarce materials are two the…
Successful incorporation of the spin degree of freedom in semiconductor technology requires the development of a new paradigm allowing for a scalable, non-destructive electrical detection of the spin-polarization of injected charge carriers…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
In metallic systems with spin-orbit coupling a longitudinal charge current may generate a transverse pure spin current; vice-versa an injected pure spin current may result in a transverse charge current. Such direct and inverse spin Hall…
The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect.…
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
We investigate electrically-induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the…
While the helical character of the edge channels responsible for charge transport in the quantum spin Hall regime of a two-dimensional topological insulator is by now well established, an experimental confirmation that the transport in the…
We show that a two-dimensional spin-orbit-coupled system in the presence of a charge/spin-density wave with a wave-vector perpendicular to an applied electric field supports bulk manifestations of the direct/inverse spin-Hall effect. We…
Studies of spin manipulation in semiconductors has benefited from the possibility to grow these materials in high quality on top of optically active III-V systems. The induced electroluminescence in these layered semiconductor…
The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the…
The generation and manipulation of carrier spin polarization in semiconductors solely by electric fields has garnered significant attention as both an interesting manifestation of spin-orbit physics as well as a valuable capability for…
The spin-Hall effect describes the interconversion of charge currents and spin currents, enabling highly efficient manipulation of magnetization for spintronics. Symmetry conditions generally restrict polarizations of these spin currents to…
Electrical injection and detection of spin-polarized electrons is demonstrated for the first time in a single wafer, all-semiconductor, GaAs-based lateral spintronic device, employing p+-(Ga,Mn)As/n+-GaAs ferromagnetic Esaki diodes as spin…
We show that the electron spin polarization generated by an electrical current may have its direction controlled and magnitude amplified by periodic optical excitation. The electrical and optical spin control methods were combined and…
A longstanding goal of research in semiconductor spintronics is the ability to inject, modulate, and detect electron spin in a single device. A simple prototype consists of a lateral semiconductor channel with two ferromagnetic contacts,…