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We propose a setup for universal and electrically controlled quantum information processing with hole spins in Ge/Si core/shell nanowire quantum dots (NW QDs). Single-qubit gates can be driven through electric-dipole-induced spin resonance,…

Mesoscale and Nanoscale Physics · Physics 2013-12-17 Christoph Kloeffel , Mircea Trif , Peter Stano , Daniel Loss

We report distinct nonanalytic signatures in the spin-orbit entanglement of a 2D electron gas with Rashba interactions at integer values of the filling factor and at certain level crossings. The accompanying sharp changes in the bulk…

Strongly Correlated Electrons · Physics 2016-05-16 Rona F. Barbarona , Francis N. C. Paraan

We introduce the spin and momentum dependent {\em force operator} which is defined by the Hamiltonian of a {\em clean} semiconductor quantum wire with homogeneous Rashba spin-orbit (SO) coupling attached to two ideal (i.e., free of spin and…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Branislav K. Nikolic , Liviu P. Zarbo , Sven Welack

We describe a new effect in semiconductor spintronics that leads to dissipationless spin-currents in paramagnetic spin-orbit coupled systems. We argue that in a high mobility two-dimensional electron system with substantial Rashba…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Jairo Sinova , Dimitrie Culcer , Q. Niu , N. A. Sinitsyn , T. Jungwirth , A. H. MacDonald

We study the transport of electrons through a single-mode quantum ring with electric field induced Rashba spin-orbit interaction that is subjected to an in-plane magnetic field and weakly coupled to electron reservoirs. Modelling a ring…

Mesoscale and Nanoscale Physics · Physics 2013-09-09 Fateme K. Joibari , Ya. M. Blanter , Gerrit E. W. Bauer

We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…

Mesoscale and Nanoscale Physics · Physics 2015-05-28 Manuel Valin-Rodriguez

The Rashba superconductor, in which spin-splitting bands become superconducting, is fascinating as a novel superconducting system in low dimensional systems. Here, we present the results of $\textit{in-situ}$ transport measurements on a…

We investigate theoretically the Rashba spin-orbit interaction in InAs/GaSb quantum wells(QWs). We find that the Rashba spin-splitting (RSS) depends sensitively on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 J. Li , Kai Chang , G. Q. Hai , K. S. Chan

We report on a general theory for analyzing quantum transport through devices in the Metal-QD-Metal configuration where QD is a quantum dot or the device scattering region which contains Rashba spin-orbital and electron-electron…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Qing-feng Sun , Jian Wang , Hong Guo

We use a mean field approach to study the conductance modulation of gate controlled semiconductor spin interferometers based on the Rashba spin-orbit coupling effect. The conductance modulation is found to be mostly due to Ramsauer type…

Mesoscale and Nanoscale Physics · Physics 2013-05-29 M. Cahay , S. Bandyopadhyay

In transition-metal dichalcogenides, electrons in the K-valleys can experience both Ising and Rashba spin-orbit couplings. In this work, we show that the coexistence of Ising and Rashba spin-orbit couplings leads to a special type of valley…

Mesoscale and Nanoscale Physics · Physics 2019-03-04 Benjamin T. Zhou , Katsuhisa Taguchi , Yuki Kawaguchi , Yukio Tanaka , K. T. Law

In a two dimensional electron gas with Rashba spin-orbit coupling, the external electric field may cause a spin Hall current in the direction perpendicular to the electric field. This effect was called the intrinsic spin Hall effect. In…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 Xiaohua Ma , Liangbin Hu , Ruibao Tao , Shun-Qing Shen

Building a practical quantum processor involves integrating millions of physical qubits along with the necessary components for individual qubit manipulation and readout. Arrays of gated silicon spins offer a promising route toward…

The strength of the (Rashba-type) spin-orbit coupling in mesoscopic semiconductor rings can be tuned with external gate voltages. Here we consider the case of a periodically changing spin-orbit interaction strength as induced by sinusoidal…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Peter Foldi , Mihaly G. Benedict , Orsolya Kalman , F. M. Peeters

In materials lacking inversion symmetry, the spin-orbit coupling enables the direct connection between the electron's spin and its linear momentum, a phenomenon called inverse spin galvanic effect. In magnetic materials, this effect…

Mesoscale and Nanoscale Physics · Physics 2019-07-17 Abdulkarim Hariri , Meshal Alawein , Aurelien Manchon

An influence of spin-orbit interaction on the tunneling between two 2D electron layers is considered. Particular attention is addressed to the relation between the contribution of Rashba and Dresselhaus types. It is shown that without…

Other Condensed Matter · Physics 2009-11-13 I. V. Rozhansky , N. S. Averkiev

We propose a semiconductor structure that can rotate the electron spin without using ferromagnetic contacts, tunneling barriers, external radiation etc. The structure consists of a strongly curved one-dimensional ballistic wire with…

Mesoscale and Nanoscale Physics · Physics 2018-05-03 Maxim P. Trushin , Alexander L. Chudnovskiy

We study the spin-Hall effect in systems with weak cubic Rashba spin-orbit interaction. To this end we derive particle and spin diffusion equations and explicit expressions for the spin-current tensor in the diffusive regime. We discuss the…

Disordered Systems and Neural Networks · Physics 2009-11-11 O. Bleibaum , S. Wachsmuth

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensional hole system in a GaAs quantum well, we demonstrate a new…

We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect layer-to-layer alignment. In a double quantum dot system, we…