Related papers: Lande g-tensor in semiconductor nanostructures
Current imaging scanning tunneling microscopy is used to observe the electronic wavefunctions in InAs/ZnSe core/shell nanocrystals. Images taken at a bias corresponding to the s conduction band state show that it is localized in the central…
Self-assembled, semimetallic ErSb single crystal nanostructures, grown by molecular beam epitaxy, are embedded within a semiconductor GaSb matrix. Formation, evolution and orientation of a variety of nanostructures, including spherical…
Inelastic spin relaxation and spin splitting $\epsilon_{\mathrm{s}}$ in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Due to both g-factor energy dependence and spin-orbit coupling $\epsilon_{\mathrm{s}}$…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
A grand challenge of nanoscience is to master the control of structure and properties in order to go beyond present day functionality. The creation of nanostructures via atom manipulation by means of a scanning probe represents one of the…
We describe a systematic study of the synthesis, microstructure and magnetization of hybrid ferromagnet-semiconductor nanomaterials comprised of MnAs nanoclusters embedded in a p-doped GaAs matrix. These samples are created during the in…
Magnetic semiconductor quantum dots with a few carriers represent an interesting model system where ferromagnetic interactions can be tuned by voltage. By designing the geometry of a doped quantum dot, one can tailor the anisotropic quantum…
Extending a previous work on spin precession in GaAs/AlGaAs quantum dots with spin-orbit coupling, we study the role of deformation in the external confinement. Small elliptical deformations are enough to alter the precessional…
We present angle-dependent measurements of the effective g-factor g* in a Ge-Si core-shell nanowire quantum dot. g* is found to be maximum when the magnetic field is pointing perpendicular to both the nanowire and the electric field induced…
We present results from a theoretical and experimental study of spin-splitting in small open lateral quantum dots (i.e. in the regime when the dot is connected to the reservoirs via leads that support one or more propagating modes). We…
The paper presents a computational study of the ground-state properties of a quantum nanomagnet possessing the shape of a finite two-legged ladder composed of 12 spins $S=1/2$. The system is described with isotropic quantum Heisenberg model…
The microscopic structure of spin-orbit fields for the technologically important Fe/GaAs interface is uncovered from first principles. A symmetry based method allows to obtain the spin-orbit fields---both their magnitude and…
Nanoscale size-effects drastically alter the fundamental properties of semiconductors. Here, we investigate the dominant role of quantum confinement in the field-effect device properties of free-standing InAs nanomembranes with varied…
We evaluate the Lande g factor of electrons in quantum dots (QDs) fabricated from GaAs quantum well (QW) structures of different well width. We first determine the Lande electron g factor of the QWs through resistive detection of electron…
We investigate the effective Lande factor in semiconductor nanowires with strong Rashba spin-orbit coupling. Using the $\mathbf{k}\cdot\mathbf{p}$ theory and the envelope function approach we derive a conduction band Hamiltonian where the…
Gate geometry and bias asymmetry can be used to engineer spin dynamics in gate-defined Ge hole quantum dots by reshaping the confinement potential and driving transitions between distinct confinement regimes. In this work, we show that…
We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk…
We study the electronic structure of a single self-assembled InAs quantum dot by probing elastic single-electron tunneling through a single pair of weakly coupled dots. In the region below pinch-off voltage, the non-linear threshold voltage…
Recent experiments on Majorana fermions in semiconductor nanowires [Albrecht et al., Nat. 531, 206 (2016)] revealed a surprisingly large electronic Land\'e g-factor, several times larger than the bulk value - contrary to the expectation…
Single electron spins in semiconductor quantum dots (QDs) are a versatile platform for quantum information processing, however controlling decoherence remains a considerable challenge. Recently, hole spins have emerged as a promising…