Related papers: Lande g-tensor in semiconductor nanostructures
Pauli spin blockade (PSB) in double quantum dots (DQDs) has matured into a prime technique for precise measurements of nanoscale system parameters. In this work we demonstrate that systems with site-dependent g-tensors and spin-polarized…
The band structures of $^{68,70}$Ge, $^{128,130,132,134}$Ce and $^{132,134,136,138}$Nd are investigated using the triaxial projected shell model (TPSM) approach. These nuclei depict forking of the ground-state band into several s-bands and…
We demonstrate gate control of the electronic g-tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we…
The knowledge of electron and hole g-factors, their control and engineering are key for the usage of the spin degree of freedom for information processing in solid state systems. The electronic g-factor will be materials dependent, the…
We present theoretical calculations of the Land\'e g-factors of semiconductor nanostructures using a time-dependent empirical tight-binding method. The eigenenergies and eigenfunctions of the band edge states are calculated as a function of…
The spin orientation of a magnetic dopant in a zincblende semiconductor strongly influences the spatial structure of an acceptor state bound to the dopant. The acceptor state has a roughly oblate shape with the short axis aligned with the…
The determination and control of the electron $g$-factor in semiconductor quantum dots (QDs) are fundamental prerequisites in modern concepts of spintronics and spin-based quantum computation. We study the dependence of the $g$-factor on…
While electronic and spectroscopic properties of self-assembled In_{1-x}Ga_{x}As/GaAs dots depend on their shape, height and alloy compositions, these characteristics are often not known accurately from experiment. This creates a difficulty…
We study the electronic states of core multi-shell semiconductor nanowires, including the effect of strong magnetic fields. We show that the multi-shell overgrowth of a free-standing nanowire, together with the prismatic symmetry of the…
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…
Zeeman splitting of 1D hole subbands is investigated in quantum point contacts (QPCs) fabricated on a (311) oriented GaAs-AlGaAs heterostructure. Transport measurements can determine the magnitude of the g-factor, but cannot usually…
We use magnetotunnelling spectroscopy as a non-invasive probe to produce two-dimensional spatial images of the probability density of an electron confined in a self-assembled semiconductor quantum dot. The images reveal clearly the…
We provide a quantitative description of the structure of edge states in split-gate quantum wires in the integer quantum Hall regime. We develop an effective numerical approach based on the Green's function technique for the self-consistent…
The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with…
Low-temperature magnetotransport measurements are performed on GaAs/InSb core-shell nanowires. The nanowires were self-catalyzed grown by molecular beam epitaxy. The conductance measurements as a function of back-gate voltage show an…
We investigated the entanglement in a diluted magnetic semiconductor quantum dot, crucial for quantum technologies. Despite their potential, these systems exhibit low extraction rates. We explore self-assembled InGaAs quantum dots, focusing…
We study the electronic structure of full-shell superconductor-semiconductor nanowires, which have recently been proposed for creating Majorana zero modes, using an eight-band $\vec{k} \cdot \vec{p}$ model within a fully self-consistent…
The Lande g-factors for CdSe quantum dots and rods are investigated within the framework of the semiempirical tight-binding method. We describe methods for treating both the n-doped and neutral nanostructures, and then apply these to a…
We present a review of experimental and theoretical studies of the spin response of charge carriers to an external magnetic field in bulk semiconductors and semiconductor nanostructures. The linear response is quantitatively characterized…
The complex structure of the valence band in many semiconductors leads to multifaceted and unusual properties for spin-3/2 hole systems compared to typical spin-1/2 electron systems. In particular, two-dimensional hole systems show a highly…