Related papers: Spin precession in inversion-asymmetric two-dimens…
In a two-dimensional electron gas as realized by a semiconductor quantum well, the presence of spin-orbit coupling of both the Rashba and Dresselhaus type leads to anisotropic dispersion relations and Fermi contours. We study the effect of…
The influence of the Rashba spin-orbit coupling on the electron spin dynamics is investigated for a ballistic semiconductor quantum wire with a finite width. We monitor the spin evolution using the time-dependent Schr\"odinger equation. The…
We investigate experimentally and theoretically the spin-orbit effects on the weak localization in a (110) GaAs 2-dimensional electron gas (2DEG). We analyze the role of two different terms in the spin splitting of the conduction band: the…
We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
We investigate the spin-current linear response conductivity tensor to an electric field in a paramagnetic two dimensonal electron gas with both Rashba and Dresselhaus spin-orbit coupling in the weak scattering regime. In the ususal case…
The effective linear coupling coefficient and the total spin-splitting are calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and gate voltage affect an internal field and an electron density distribution in the…
Spin splittings in III-V materials and heterostructures are of interest because of potential applications, mainly in spintronic devices. A necessary condition for the existence of these spin splittings is the absence of inversion symmetry.…
We study the spin polarization and its associated spin-Hall current due to EDSR in disordered two-dimensional electron systems. We show that the disorder induced damping of the resonant spin polarization can be strongly reduced by an…
We report on spatially resolved measurements of the spin-orbit effective magnetic field in a GaAs/InGaAs quantum-well. Biased gate electrodes lead to an electric-field distribution in which the quantum-well electrons move according to the…
The length over which electron spins reverse direction due to the Rashba effect when injected with an initial polarization along the axes of a quantum wire is investigated theoretically. A soft wall confinement of the wire renormalizes the…
The spin Hall effect is investigated in a high mobility two dimensional electron system with the spin-orbital coupling of both the Rashba and the Dresselhaus types. A spin current perpendicular to the electric field is generated by either…
We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions…
The spin-Hall conductivity of a disordered 2D electron gas has been calculated for an arbitrary spin-orbit interaction. We have found that in the diffusive regime of electron transport, in accordance with previous calculations, the dc…
We investigate the Rashba and Dresselhaus spin-orbit (SO) couplings in GaAs quantum wells in the range of well widths $w$ allowing for a transition of the electron occupancy from one to two subbands. By performing a detailed…
We investigate spin accumulation caused by spin-orbit interactions (SOIs) in a two dimensional electron system confined in one direction. We calculate spin density caused by three kinds of SOIs; arising from edge potential, Rashba and…
In this work, we present the analytical solution of the effective mass Pauli equation, with Rashba and linear Dresselhaus interactions, for an electron gas moving through a semiconductor quantum dot under a longitudinal electric field,…
We demonstrate experimentally and theoretically that two-dimensional (2D) heavy hole systems in single heterostructures exhibit a \emph{decrease} in spin-orbit interaction-induced spin splitting with an increase in perpendicular electric…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
Spin properties of single electron states in laterally coupled quantum dots in the presence of a perpendicular magnetic field are studied by exact numerical diagonalization. Dresselhaus (linear and cubic) and Bychkov-Rashba spin-orbit…