Related papers: Magneto shot noise in noncollinear diffusive spin-…
We study the effects of spin accumulation (inside reservoirs) on electronic transport with tunneling and reflections at the gates of a quantum dot. Within the stub model, the calculation focus on the current-current correlation function for…
We propose a conceptually new way to gather information on the electron bands of buried metal(semiconductor)/insulator interfaces. The bias dependence of low frequency noise in Fe$_{1-x}$V$_{x}$/MgO/Fe (0 $<$ x $<$ 0.25) tunnel junctions…
We develop a theoretical model for polarization-selective phonon pumping induced by magnon-phonon coupling in a ferromagnetic/non-magnetic acoustic bilayer structure, focusing on the effects arising from a misalignment between the magnetic…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
We develop a theory of the non-equilibrium current response for metallic systems near quantum critical points where electronic quasiparticles fractionalize, such as systems near continuous metal-insulator transitions or composite Fermi…
We study spin-resolved noise in Coulomb blockaded double quantum dots coupled to ferromagnetic electrodes. The modulation of the interdot coupling and spin polarization in the electrodes gives rise to an intriguing dynamical spin…
An anomalous (inverse) spin accumulation in the nonmagnetic spacer may build up when the spin valve consists of magnetic films having different spin symmetries. This leads to wavy-like dependence of spin-transfer torque on the angle between…
Intrinsic noise is known to be ubiquitous in Josephson junctions. We investigate a voltage biased superconducting tunnel junction including a very small number of pinholes - transport channels possessing a transmission coefficient close to…
We show that shot noise in a resonant tunneling diode biased in the negative differential resistance regions of the I-V characteristic is enhanced with respect to ``full'' shot noise. We provide experimental results showing a Fano factor up…
A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven…
Spin noise sets fundamental limits to the precision of measurements using spin-polarized atomic vapors, such as performed with sensitive atomic magnetometers. Spin squeezing offers the possibility to extend the measurement precision beyond…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We present a first-principles analysis of the noise spectra of alkali-metal-metal vapors in and out of the spin-exchange-relaxation-free (SERF) regime, and we predict non-intuitive features with a potential to further improve the…
Shot noise is not normally evident in bulk solid-state conductors, since it is strongly attenuated by inelastic collisions. The ``anomalous'' emergence of macroscopic shot noise is discussed in G. Gomila and L. Reggiani, Phys. Rev. B 62,…
We theoretically investigate the finite-frequency as well as the zero-frequency charge-current fluctuations through a noncollinear single-electron spin-valve transistor in the limit of sequential tunneling. The system under consideration…
Per the fluctuation-dissipation theorem, the information obtained from spin fluctuation studies in thermal equilibrium is necessarily constrained by the system's linear response functions. However, by including weak radiofrequency magnetic…
Current and its noise in a ferromagnetic double tunnel barrier device with a small spacer particle were studied in the framework of the sequential tunneling approach. Analytical formulae were derived for electron tunneling through the…
In semiconductor spintronic devices, the semiconductor is usually lightly doped and nondegenerate, and moderate electric fields can dominate the carrier motion. We recently derived a drift-diffusion equation for spin polarization in the…
We study spin and charge diffusion in metallic-ferromagnet/topological-insulator junctions. The coupled diffusion equations are derived perturbatively with respect to the strength of the interlayer tunneling. We calculate spin accumulation…