Related papers: Half-metallic diluted antiferromagnetic semiconduc…
The antiferromagnetic (AF) model is generalized for the quasielectron system composed of identical ionic-covalent dimers. The density-fluctuation and covalent-correlation operators are constructed based on the extended AF density matrices,…
We present results based on local spin density calculations of a computational search for half-metallic (HM) antiferromagnetic (AFM) materials within the class of double perovskite structure oxides LaM'M''O3 that incorporate open shell 3d…
We have calculated the magnetic properties of substituted 3d-impurities (Cr-Ni) in a GaAs host by means of first principles electronic structure calculations. We provide a novel model explaining the ferromagnetic long rang order of III-V…
We theoretically argue that, in doped AB bilayer graphene, the electron-electron coupling can give rise to the spontaneous formation of fractional metal phases. These states, being generalizations of a more common half-metal, have a Fermi…
We report a combined theoretical and experimental investigation of half-metallic ferromagnetism in equiatomic quaternary Heusler alloy CoRuMnSi. Room temperature XRD analysis reveals that the alloy crystallizes in L21 disorder instead of…
This paper demonstrates that the results of a Monte Carlo simulation of a diluted 2D Ising antiferromagnetic system corresponds with the phase diagram for non conventional superconductors. An energy gap of this system is defined. We also…
Considering a general situation where a semiconductor is doped by magnetic impurities leading to a carrier-induced ferromagnetic exchange coupling between the impurity moments, we show theoretically the possible generic existence of three…
The spin-dependent electronic structures of aluminum-(Al) doped zigzag silicene nanoribbons (ZSiNRs) are investigated by first-principles calculations. When ZSiNRs are substitutionally doped by a single Al atom on different sites in every…
Recent experimental work on Mn2RuxGa demonstrates its potential as a compensated ferrimagnetic half-metal (CFHM).Here we present a set of high-throughput ab initio density functional theory calculations and detailed experimental…
Spin-polarized antiferromagnets have recently gained significant interest because they combine the advantages of both ferromagnets (spin polarization) and antiferromagnets (absence of net magnetization) for spintronics applications. In…
Recently synthesized quadruple perovskite CuCu$_3$Fe$_2$Re$_2$O$_{12}$ possesses strong ferromagnetism and unusual electron properties, including enhanced electronic specific heat. Application of the first principles electronic structure…
We determine where a given concentration of ferromagnetic (FM) bonds doped into a square lattice antiferromagnet must go to minimize the system's total magnetic energy. We find (i) an infinite degeneracy of ground--state arrangements of FM…
The feature-rich electronic and magnetic properties of fluorine-doped graphene nanoribbons are investigated by the first-principles calculations. They arise from the cooperative or competitive relations among the significant chemical bonds,…
A brief review of experimental and theoretical studies of half-metallic ferromagnets (HMF) and spin gapless semiconductors (SGS) is given. The data on resistivity and magnetoresistivity are presented. An important role of non-quasiparticle…
We present magnetotransport evidence for antiferromagnetism in films of the electron-doped cuprates Pr$_{2-x}$Ce$_x$CuO$_4$. Our results show clear signature of static antiferromagnetism up to optimal doping x=0.15, with a quantum phase…
Single-phase polycrystalline La2MnVO6 samples were synthesized by arc melting and characterized by X-ray diffraction, magnetization and resistivity measurements. We find that the compound has cubic (space group), partly ordered double…
We have calculated the energies of the phase-separated states for degenerate antiferromagnetic semiconductors including the possibility of the existence of conduction electrons in the antiferromagnetic part of the phase-separated states. It…
It is known that electron interactions can cause a perfect spin polarization of the Fermi surface of a metal. In such a situation only half of the non-interacting Fermi surface is available, and thus this phase is commonly referred to as a…
Exhibiting antiferromagnetic interlayer coupling in dilute magnetic semiconductor multilayers is essential for the realisation of magnetoresistances analogous to giant magnetoresistance in metallic multilayer structures. In this work we use…
First principles studies were performed in order to find out the possibility of inducing half-metallicity in Heusler Compound CoFeMnSb, by means of alloying it with 3d-transition metal elements. Proper alloying element is selected through…