Related papers: Mott transition observed by micro-Raman scattering…
We study how the Mott metal-insulator transition (MIT) is influenced when we deal with electrons with different angular momenta. For lithium we found an essential effect when we include $p$-orbitals in the description of the Hilbert space.…
We investigate the resonant two-magnon Raman scattering in the two-dimensional (2D) and ladder-type Mott insulators by using a half-filled Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for…
We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator…
Tuning the electronic properties of a matter is of fundamental interest in scientific research as well as in applications. Recently, the Mott insulator-metal transition has been reported in a pristine layered transition metal…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
We have studied the spin-Peierls (SP) transition in alpha'-Na_{1-delta}V_2O_5 (delta = 0, 0.01 and 0.1) by means of Raman scattering. At room temperature, we observe six A_1 and three A_2 phonon modes and a broad Raman band. Below…
We report the phase-transition controlled magnetic anisotropy modulation in the (Co/Pt)2/VO2 heterostructure, where VO2 is introduced into the system to applied an interfacial strain by its metal-insulator transition. A large reversible…
We present a class of holographic models that behave effectively as prototypes of Mott insulators, materials where electron-electron interactions dominate transport phenomena. The main ingredient in the gravity dual is that the gauge-field…
The single-layer Mott insulator strontium iridate Sr$_2$IrO$_4$ was studied using a scanning tunneling microscope. This measurement technique is unique due to the transport properties of this Mott insulator allowing tunneling measurements…
The metal-to-insulator transition (MIT) in rutile VO$_2$ has proven uniquely difficult to characterize because of the complex interplay between electron correlations and atomic structure. Here we report the discovery of the sudden collapse…
Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…
We have used Raman scattering to investigate the magnetic excitations and lattice dynamics in the prototypical spin-orbit Mott insulators Sr2IrO4 and Sr3Ir2O7. Both compounds exhibit pronounced two-magnon Raman scattering features with…
We report Raman spectra measurements on a MoS2 monolayer supported on SiO2 as a function of temperature. Unlike in previous studies, the positions of the two main Raman modes, E2g1 and A1g exhibited nonlinear temperature dependence.…
Resonance Raman scattering, a very effective and sensitive technique for atomically thin semiconducting transition metal dichalcogenide, can be used to observe the phonons from the entire Brillouin zone. In addition to the significance of…
Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of particular interest due to the fact that the MIT happens in the…
The mechanisms that drive metal-to-insulator transitions (MIT) in correlated solids are not fully understood. For example, the perovskite (PV) SrCoO3 is a FM metal while the oxygen-deficient (n-doped) brownmillerite (BM) SrCoO2.5 is an…
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unclear for nonlinear dynamical circuit elements, such as Mott…
The metal-insulator (MI) transition in BaVS$_3$ has been studied at ambient pressure and under hydrostatic pressure up to $p=26 $kbar in the frequency range of $20-3000 $cm$^{-1}$. The charge gap determined from the optical reflectivity is…
By means of in situ synchrotron X-ray diffraction and Raman spectroscopy under hydrostatic pressure, we investigate the structural stability of the quadruple perovskite LaMn7O12. At 34 GPa, the data unveil a first-order structural phase…
Vanadium dioxide is currently considered as one of the most promising metarials for oxide elcteronics. Both planar and sandwich thin-film MOM devices based on VO2 exhibit electrical switching with an S-shaped I-V characteristic, and this…