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Related papers: Spin and valley-orbit splittings in SiGe/Si hetero…

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Effect of electric field on spin splitting in SiGe quantum wells (QWs) has been studied theoretically. Microscopical calculations of valley and spin splittings are performed in the effective $sp^3d^5s^*$ tight-binding model. The splittings…

Mesoscale and Nanoscale Physics · Physics 2008-10-07 M. O. Nestoklon , E. L. Ivchenko , J. -M. Jancu , P. Voisin

Electron spin-qubits in silicon-germanium (SiGe) heterostructures are a major candidate for the realization of scalable quantum computers. A critical challenge in strained Si/SiGe quantum wells (QWs) is the existence of two nearly…

Mesoscale and Nanoscale Physics · Physics 2025-11-20 Abel Thayil , Lasse Ermoneit , Markus Kantner

Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…

Mesoscale and Nanoscale Physics · Physics 2015-03-13 Mark Friesen , S. N. Coppersmith

Electron spin qubits in Si/SiGe quantum wells are limited by the small and variable energy separation of the conduction band valleys. While sharp quantum well interfaces are pursued to increase the valley splitting energy deterministically,…

In Si/SiGe heterostructures, the low-lying excited valley state seriously limit operability and scalability of electron spin qubits. For characterizing and understanding the local variations in valley splitting, fast probing methods with…

Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the…

Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state…

Electron spins in silicon quantum dots are excellent qubits because they have long coherence times, high gate fidelities, and are compatible with advanced semiconductor manufacturing techniques. The valley degree of freedom, which results…

Mesoscale and Nanoscale Physics · Physics 2023-03-27 Xinxin Cai , Elliot J. Connors , John M. Nichol

The performance and scalability of silicon spin qubits depend directly on the value of the conduction band valley splitting. In this work, we investigate the influence of electromagnetic fields and the interface width on the valley…

Mesoscale and Nanoscale Physics · Physics 2024-05-07 Jonas R. F. Lima , Guido Burkard

In silicon spin qubits, the valley splitting must be tuned far away from the qubit Zeeman splitting to prevent fast qubit relaxation. In this work, we study in detail how the valley splitting depends on the electric and magnetic fields as…

Mesoscale and Nanoscale Physics · Physics 2020-11-11 Amin Hosseinkhani , Guido Burkard

We present a calculation of the wavevector-dependent subband level splitting from spin-orbit coupling in Si/SiGe quantum wells. We first use the effective-mass approach, where the splittings are parameterized by separating contributions…

Mesoscale and Nanoscale Physics · Physics 2009-08-18 M. Prada , G. Klimeck , R. Joynt

Valley splitting is a key figure of silicon-based spin qubits. Quantum dots in Si/SiGe heterostructures reportedly suffer from a relatively low valley splitting, limiting the operation temperature and the scalability of such qubit devices.…

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent…

The notoriously low and fluctuating valley splitting is one of the key challenges for electron spin qubits in silicon (Si), limiting the scalability of Si-based quantum processors. In silicon-germanium (SiGe) heterostructures, the problem…

Mesoscale and Nanoscale Physics · Physics 2025-12-23 Abel Thayil , Lasse Ermoneit , Lars R. Schreiber , Thomas Koprucki , Markus Kantner

We present the theory and measurement of valley splitting in a quantum point contact (QPC) in a modulation doped Si/SiGe heterostructure. Our measurements are performed on a submicron Schottky-gated device. An effective mass theory is…

Mesoscale and Nanoscale Physics · Physics 2010-03-30 L. M. McGuire , Mark Friesen , K. A. Slinker , S. N. Coppersmith , M. A. Eriksson

A theory based on localized-orbital approaches is developed to describe the valley splitting observed in silicon quantum wells. The theory is appropriate in the limit of low electron density and relevant for proposed quantum computing…

Coherent coupling between distant qubits is needed for any scalable quantum computing scheme. In quantum dot systems, one proposal for long-distance coupling is to coherently transfer electron spins across a chip in a moving potential.…

An important requirement for a physical embodiment of a quantum computer is that arbitrary single-qubit operations can be performed. In the case of spin-qubits, this means that arbitrary spin rotations must be possible. Here we demonstrate…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 A. M. Tyryshkin , S. A. Lyon , W. Jantsch , F. Schaeffler

We analyze spin splitting of the two-dimensional hole spectrum in strained asymmetric SiGe quantum wells (QWs). Based on the Luttinger Hamiltonian, we obtain expressions for the spin-splitting parameters up to the third order in the…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 B. A. Glavin , K. W. Kim

Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting…

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