Related papers: Transient tunneling current of single electron tra…
We develope a model to describe the transmission coefficient and tunneling current in the presence of photon-electron coupling in a resonant diode. Our model takes into account multiphoton processes as well as the transitions between…
We theoretically study the tunneling time by investigating a wave packet of Bose-condensed atoms passing through a square barrier. We find that the tunneling time exhibits different scaling laws in different energy regimes. For negative…
Poisson statistics predicts that the shot noise in a tunnel junction has a temperature independent third cumulant e^2\I, determined solely by the mean current I. Experimental data, however, show a puzzling temperature dependence. We…
We investigate cross-correlations in the tunneling currents through two parallel quantum dots coupled to independent electrodes and gates and interacting via an inter-dot Coulomb interaction. The correlations reveal additional information,…
We study the statistical properties of currents in two particular systems of capacitively coupled parallel transport channels. In the first system, each transport channel contains a single quantum dot in contact with two electron…
The tunneling time of particle through given barrier is commonly defined in terms of "internal clocks" which effectively measure the interaction time with internal degrees of freedom of the barrier. It is known that this definition of the…
We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed…
It is well known that the electron transfer (ET) reaction in donor-bridge-acceptor systems is much influenced by the bridge conformational changes. However, the importance of the dynamical contribution to the ET rate is still under debate.…
Quantum systems as used for quantum computation or quantum sensing are nowadays often realized in solid state devices as e.g. complex Josephson circuits or coupled quantum-dot systems. Condensed matter as an environment influences heavily…
We use simulations to examine current saturation in sub-micron graphene transistors on SiO2/Si. We find self-heating is partly responsible for current saturation (lower output conductance), but degrades current densities >1 mA/um by up to…
We analyze the charge transport through a single level quantum dot coupled to a normal (N) and superconducting (S) leads where the electron pairs exist either as the coherent (for temperatures below T_c) or incoherent objects (in a region…
The current through ferromagnetic single-electron transistors (SET's) is considered. Using path integrals the linear response conductance is formulated as a function of the tunnel conductance vs. quantum conductance and the temperature vs.…
We investigate strong mechanical feedback for the single-electron tunneling device coupled to an underdamped harmonic oscillator in the high-frequency case, when the mechanical energy of the oscillator exceeds the tunnel rate, and for weak…
Radio-frequency reflectometry in silicon single-electron transistors (SETs) is presented. At low temperatures (<4 K), in addition to the expected Coulomb blockade features associated with charging of the SET dot, quasi-periodic oscillations…
It has been predicted that in the presence of a sufficiently high-dissipative environment transport in a small tunnel junction can become extremely regular, giving rise to the phenomenon of single-electron tunneling oscillations. Recent…
The theory of inelastic electron tunneling spectroscopy (IETS) and motions of single adsorbed atoms and molecules on metal surfaces induced by vibrational excitation with a scanning tunneling microscope (STM) is reviewed. The theory of…
Heavy holes confined in quantum dots are predicted to be promising candidates for the realization of spin qubits with long coherence times. Here we focus on such heavy-hole states confined in Germanium hut wires. By tuning the growth…
The operation of resistively-coupled single-electron transistor (R-SET) is studied quantitatively. Due to the Nyquist noise of the coupling resistance, degradation of the R-SET performance is considerable at temperatures $T$ as small as…
We analyze heat and charge transport through a single-level quantum dot coupled to two BCS superconductors at different temperatures to first order in the tunnel coupling. In order to describe the system theoretically, we extend a real-time…
We report on a new type of single-electron transistor (SET) comprising two highly resistive Cr thin-film strips (~ 1um long) connecting a 1 um-long Al island to two Al outer electrodes. These resistors replace small-area oxide tunnel…