Related papers: Rashba spin splitting in biased semiconductor quan…
We investigate theoretically the Rashba spin-orbit interaction in InAs/GaSb quantum wells(QWs). We find that the Rashba spin-splitting (RSS) depends sensitively on the thickness of the InAs layer. The RSS exhibits nonlinear behavior for…
We find that the Rashba spin splitting is intrinsically a nonlinear function of the momentum, and the linear Rasha model may overestimate it significantly, especially in narrow-gap materials. A nonlinear Rashba model is proposed, which is…
We present a theory pertaining to the asymptotic behavior of Rashba energy splitting in a quantum-well state (QWS). First, unlike previous studies, we derive $\textbf{k}$-linear Rashba term from a first-principles Hamiltonian in a…
Near-surface two-dimensional electron gases on the topological insulator Bi$_2$Te$_2$Se are induced by electron doping and studied by angle-resolved photoemission spectroscopy. A pronounced spin-orbit splitting is observed for these states.…
Rashba spin splitting in two-dimensional (2D) semiconductor systems is generally calculated in a ${\bf k} \cdot {\bf p}$ Luttinger-Kohn approach where the spin splitting due to asymmetry emerges naturally from the bulk band structure. In…
In inversion-asymmetric semiconductors, spin-orbit coupling induces a k-dependent spin splitting of valence and conduction bands, which is a well-known cause for spin decoherence in bulk and heterostructures. Manipulating nonequilibrium…
Atomically thin two-dimensional (2D) layered semiconductors such as transition metal dichalcogenides (TMDs) have attracted considerable attention due to their tunable band gap, intriguing spin-valley physics, piezoelectric effects and…
A Rashba type spin-orbit splitting is found for quantum well states formed in ultrathin Pb films on Si(111). The resulting momentum splitting is comparable to what is found for semiconductor heterostructures. The splitting shows no coverage…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
We study the band structure of the $\text{Bi}_2\text{Se}_3$ topological insulator (111) surface using angle-resolved photoemission spectroscopy. We examine the situation where two sets of quantized subbands exhibiting different Rashba…
We have studied the BiCu$_2$/Cu(111) surface alloy using low-temperature scanning tunneling microscopy and spectroscopy. We observed standing waves caused by scattering off defects and step edges. Different from previous studies on similar…
We investigate the spin accumulation effect in eccentric semiconductor multichannel rings with Rashba spin-orbit interaction and threaded by a magnetic flux. Due to the finite eccentricity, the spin polarization induced at the borders of…
Spin-split Rashba bands have been exploited to efficiently control the spin degree of freedom of moving electrons, which possesses a great potential in frontier applications of designing spintronic devices and processing spin-based…
Experimentally it is still challenging to epitaxially grow Bi(111) bilayer (BL) on conventional semiconductor substrate. Here, we propose a substrate of $\beta-$In$_2$Se$_3$(0001) with van der Waals like cleavage and large band gap of…
In two-dimensional (2D) hole systems the inversion asymmetry induced spin splitting differs remarkably from its familiar counterpart in the conduction band. While the so-called Rashba spin splitting of electron states increases linearly…
We analyze the proper inclusion of electric-field-induced spin splittings in the framework of the envelope function approximation. We argue that the Rashba effect should be included in the form of a macroscopic potential as diagonal terms…
Spin-magnetophonon level splitting in a quantum well made of a semimagnetic wide gap semiconductor is considered. The semimagnetic semiconductors are characterized by a large effective $g$ factor. The resonance conditions $\hbar\omega_{\rm…
Spin relaxation of two-dimensional electrons in asymmetrical (001) AlGaAs quantum wells are measured by means of Hanle effect. Three different spin relaxation times for spins oriented along [110], [1-10] and [001] crystallographic…
We investigate the surface Rashba effect for a surface of reduced in-plane symmetry. Formulating a k.p perturbation theory, we show that the Rashba splitting is anisotropic, in agreement with symmetry-based considerations. We show that the…
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on…