Related papers: Interface effects in spin-dependent tunneling
This article reviews static and dynamic interfacial effects in magnetism, focusing on interfacially-driven magnetic effects and phenomena associated with spin-orbit coupling and intrinsic symmetry breaking at interfaces. It provides a…
A theory of spin-dependent electron transmission through resonant tunneling diode (RTD) grown of non-centrosymmetrical semiconductor compounds has been presented. It has been shown that RTD can be employed for injection and detection of…
In conventional magnetic tunnel junctions (MTJs), the tunnel magnetoresistance (TMR) typically increases with barrier thickness as electron transmission in the antiparallel configuration decays faster than that of the parallel…
We elucidate the multi-particle transport of pair- and spin-tunnelings in strongly correlated interfaces. Not only usual single-particle tunneling but also interaction-induced multi-particle tunneling processes naturally arise from a…
We inserted non-magnetic layers of Au and Cu into sputtered AlOx-based magnetic tunnel junctions and Meservey-Tedrow junctions in order to study their effect on tunnelling magnetoresistance (TMR) and spin polarization (TSP). When either Au…
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the…
We report on spin polarization reduction by incoherent tunneling in realistic single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJ) compared to reference Fe/MgO/Fe. A large density of misfit dislocations in the Heusler based…
Perpendicular magnetic tunnel junctions (MTJ) with a bottom pinned reference layer and a composite free layer (FL) are investigated. Different thicknesses of the FL were tested to obtain an optimal balance between tunneling…
Rapid random telegraph noise (RTN) in magnetic tunnel junctions (MTJs) is an important figure of merit for probabilistic computing applications. However, the interactions between the macrospin and spin waves with finite wave numbers reduce…
Here, we present an analytical and numerical model describing the magnetization dynamics in MgO-based spin-torque nano-oscillators with an in-plane magnetized polarizer and an out-of-plane free layer. We introduce the spin-transfer torque…
This paper presents a physics-based modeling framework for the analysis and transient simulation of circuits containing Spin-Transfer Torque (STT) Magnetic Tunnel Junction (MTJ) devices. The framework provides the tools to analyze the…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
(Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ topological insulators (TIs) are gathering increasing attention owing to their large charge-to-spin conversion efficiency and the ensuing spin-orbit torques (SOTs) that can be used to manipulate the…
Understanding quantum tunneling in many-body systems is crucial for advancing quantum technologies and nanoscale device design. Despite extensive studies of quantum tunneling, the role of interactions in determining directional transport…
We have fabricated a spin-polarized tunneling device based on half metallic manganites incorporating $Ba_{2}LaNbO_{6}$ as insulating barrier. An anomalous bias dependence of tunnel magnetoresistance (TMR) has been observed, the first of its…
Spin injection and detection are very sensitive to the interface properties between ferromagnet and semiconductor. Because the interface properties such as a tunneling resistance can be chosen independently between the injection and…
The Landauer-Buettiker formalism combined with the tight-binding transfer matrix method is used to describe the results of recent experiments: the high tunneling magnetoresistance (TMR) in (Ga,Mn)As-based trilayers and highly polarized spin…
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric…
The influence of a single magnetic cluster in a non-magnetic host metal on the spin current $\mathbf{j}^{(s)}$ and the charge current $\mathbf{j}$ in the vicinity of a ferromagnetic STM tip is studied theoretically. Spin-flip processes due…
We have found that the current- voltage characteristics of La0.7Sr0.3MnO3(-delta)/Nb:SrTiO3 rectifying junctions are quantitatively well-described by (thermally-assisted) tunneling with an effectively temperature-independent Schottky…