Related papers: Current-induced switching in single ferromagnetic …
Current-induced magnetization dynamics in a trilayer structure composed of two ferromagnetic free layers and a nonmagnetic spacer is examined. Both free layers are treated as a monodomain magnetic body with an uniform agnetization. The…
We present the current-induced switching of the internal magnetization direction in a magnetic topological insulator/topological insulator heterostructure in the quantum anomalous Hall regime. The switching process is based on the bias…
Two-level fluctuations of the magnetization state of pseudo spin-valve pillars Co(10 nm)/Cu(10 nm)/Co(30 nm) embedded in electrodeposited nanowires (~40 nm in diameter, 6000 nm in length) are triggered by spin-polarized currents of 10^7…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
We report the observation and micromagnetic analysis of current-driven magnetization switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current density exceeds a critical value of the order of $6\times…
We demonstrate the current-induced complete magnetization reversal of the free layer in lateral nanowires patterned from metallic pseudo spin valve stacks. The reversal is induced by Oersted fields in conjunction with a dipolar coupling via…
Current-induced excitations in bilayer magnetic nanopillars have been studied with large magnetic fields applied perpendicular to the layers at low temperature. Junctions investigated all have Cu/Co/Cu/Co/Cu as core layer stacks. Two types…
Measurements of magnetic hysteresis loops in single Co nanoparticles at dilution refrigerator temperatures are presented. The nanoparticles are in electric contact with bulk Al leads via tunnel junctions. The tunnel current versus magnetic…
Electrical current-induced deterministic magnetization switching in a magnetic multilayer structure without external magnetic field is realized by utilizing interlayer exchange coupling. Two ferromagnetic Co layers, with in-plane and…
Current-induced magnetic excitations in Co/Cu/Co bilayer nanopillars ($\sim$50 nm in diameter) have been studied experimentally at low temperatures for large applied fields perpendicular to the layers. At sufficiently high current densities…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
We study spin-transfer-torque driven magnetization dynamics of a perpendicular magnetic tunnel junction (MTJ) nanopillar. Based on the combination of spin-torque ferromagnetic resonance and microwave spectroscopy techniques, we demonstrate…
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane,…
We investigate the potential to use a magneto-thermo-electric instability that may be induced in a mesoscopic magnetic multi-layer (F/f/F) to create and control magnetic superstructures. In the studied multilayer two strongly ferromagnetic…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
A new current induced spin-torque transfer effect has been observed in a single ferromagnetic layer without resorting to multilayers. At a specific current density of one polarity injected from a point contact, abrupt resistance changes due…
Current-induced magnetization switching, a fundamental phenomenon related to spin-transport of electrons, enables non-voltaic and fast information write, facilitating applications in low-power memory and logic devices. However,…
Magnetoresistive random-access memory (MRAM) is poised to become a next-generation information storage device. Yet, many materials challenges remain unsolved before it can become a widely used memory storage solution. Among them, an urgent…
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…