Related papers: Current-driven magnetization switching in CoFeB/Mg…
We study the charge and spin currents passing through a magnetic tunnel junction (MTJ) on the basis of a tight-binding model. The currents are evaluated perturbatively with respect to the tunnel Hamiltonian. The charge current has the form…
We present magnetic and tunnel transport properties of (Ga,Mn)As/(In,Ga)As/(Ga,Mn)As structure before and after adequate annealing procedure. The conjugate increase of magnetization and tunnel magnetoresistance obtained after annealing is…
Spin-momentum transfer between a spin-polarized current and a ferromagnetic layer can induce steady-state magnetization precession, and has recently been proposed as a working principle for ubiquitous radio-frequency devices for radar and…
We measured the shot noise in the CoFeB/MgO/CoFeB-based magnetic tunneling junctions with a high tunneling magnetoresistance ratio (over 200% at 3 K). Although the Fano factor in the anti-parallel configuration is close to unity, it is…
The interfacial oxidation level and thermodynamic properties of the MgO-based perpendicular magnetic tunneling junctions are investigated. The symmetry-conserved tunneling effect depends sensitively on the MgO adatom energy during the RF…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
Voltage-induced ferromagnetic resonance (V-FMR) in magnetic tunnel junctions (MTJs) with a W buffer is investigated. Perpendicular magnetic anisotropy (PMA) energy is controlled by both thickness of a CoFeB free layer deposited directly on…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
The spin transfer switching current distribution within a cell was studied in magnetic tunnel junction based structures having alumina barriers with resistance-area product (RA) of 10 to 30 Ohm-um2 and tunneling magneto-resistance (TMR) of…
We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling…
We present an experimental and theoretical study of the magnetic field dependence of the mode frequency of thermally excited spin waves in rectangular shaped nanopillars of lateral sizes 60x100, 75x150, and 105x190 nm2, patterned from…
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the…
To study the impact of oxygen vacancies on spin-polarized transport, we have computed the electronic and transport properties of single (F centers) and paired (M centers) oxygen vacancies using density functional theory. These point defects…
We observe both dc voltage rectification and frequency conversion that occur when a reference microwave current is injected to a MgO based magnetic tunnel junction (MTJ). The rectification that is spin-transfer torque dependent is observed…
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies…
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in…
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the…
In this work, we calculate with ab initio methods the current-voltage characteristics for ideal single- and double-barrier Fe/MgO (001) magnetic tunnel junctions. The current is calculated in the phase-coherent limit by using the recently…
Critical current density of composite free layer (CFL) in magnetic tunneling junction is investigated. CFL consists of two exchange coupled ferromagnetic layers, where the coupling is parallel or anti-parallel. Instability condition of the…
We present a comprehensive study of the current-induced spin-orbit torques in perpendicularly magnetized Ta/CoFeB/MgO layers. The samples were annealed in steps up to 300 degrees C and characterized using x-ray absorption spectroscopy,…