Related papers: Buffer-Enhanced Electrical-Pulse-Induced-Resistive…
Polymeric methyltrioxorhenium, {(CH_{3})_{0.92}ReO_{3}}_{\infty} (poly-MTO), is the first member of a new class of organometallic hybrids which adopts the structural pattern and physical properties of classical perovskites in two dimensions…
The image formation mechanism in Piezoresponse Force Microscopy (PFM) of capacitor structures is analyzed. We demonstrate that the spatial resolution is a bilinear function of film and top electrode thicknesses, and derive the corresponding…
Remarkable exploitation of valence and lattice mismatch in epitaxial ferroelectric heterostructures generates physical effects not classically expected for perovskite oxides, such as 2D electron gas and polar skyrmions. However the…
Colossal magnetoresistive (CMR) La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) thin films have been grown under tensile strains on (100)-SrTiO$_{3}$ substrates and compressive strains on (100)-LaAlO$_{3}$ and (110)-NdGaO$_{3}$ substrates by pulsed…
Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer…
Transition-metal perovskite oxides exhibit moderately correlated metallic phases, several of which exhibit a $T^2$ resistivity scaling up to temperatures far exceeding the regime where Fermi-liquid electron-electron scattering is expected…
Antiperovskite nitrides with the general formula M$_3$N have attracted significant attention due to their tunable electronic and magnetic properties. Among them are many cobalt-based compounds predicted to exhibit high thermodynamic…
Strong spin-orbit coupled 5d transition metal based ABO3 oxides, especially iridates, allow tuning parameters in the phase diagram and may demonstrate important functionalities, for example, by means of strain effects and symmetry-breaking,…
Temperature dependent impedance spectroscopy enables the many contributions to the dielectric and resistive properties of condensed matter to be deconvoluted and characterized separately. We have achieved this for multiferroic epitaxial…
In this work, we report a high remnant polarization, 2Pr >70$\mu$C/cm$^2$ in thermally processed atomic layer deposited Hf0.5Zr0.5O2 (HZO) film on Silicon with NH3 plasma exposed thin TiN interlayer and Tungsten (W) as a top electrode. The…
Perovskite manganite thin films, $Pr_{0.55}(Ca_{1-y}Sr_y)_{0.45}MnO_3$, have been studied using x-ray photoemission spectroscopy in order to clarify the consequence of the competition between ferromagnetic metal (FM) and charge-orbital…
Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…
We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer…
The La0.7Sr0.3MnO3 (LSMO) layers and YBa2Cu3O7-{\delta}/La0.7Sr0.3MnO3 (YBCO/LSMO) bilayers were grown by magnetron sputtering on sapphire (Al2O3 or ALO) substrates. Temperature dependences of resistance of single LSMO films, grown on ALO…
We investigated the possibility of augmenting the fluence of electrons traversing CdTe thin film and thus increasing the detected signal pursuing two venues: adding a high-Z metal layer to the back of the detector surface, and adding a top…
Compositionally complex perovskites provide the opportunity to develop stable and active catalysts for electrochemical applications. The challenge lies in the identification of single-phase perovskites with optimized composition for high…
A Ferroelectric Analog Non-Volatile Memory based on a WOx electrode and ferroelectric HfZrO$_4$ layer is fabricated at a low thermal budget (~375$^\circ$C), enabling BEOL processes and CMOS integration. The devices show suitable properties…
Transition metal oxide perovskites are an ideal platform for exploring the interplay between spin, orbital, charge and lattice degrees of freedom. Among them, \ce{LaVO3} has been extensively studied in heterostructures and superlattices,…
Memory effects can have a profound impact on the resistivity of semiconductor systems, resulting in giant negative magnetoresistance and MIRO phenomena. This work opens the discussion of the memory effects in 3D conducting systems featured…
Thickness dependence and strain effects in films of $La_{1-x}A_xMnO_3$ perovskites are analyzed in the colossal magnetoresistance regime. The calculations are based on a generalization of a variational approach previously proposed for the…