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In this work thin films of the La1-xSrxCoO3 (0.05 < x < 0.26) compound were grown, employing the so-called spray pyrolysis process. The as-grown thin films exhibit polycrystalline microstructure, with uniform grain size distribution, and…

Simultaneous control of magnetic anisotropy and magnetoresistance, especially with atomic scale precision, remains a pivotal challenge for realizing advanced spintronic functionalities. Here we demonstrate cooperative continuous control…

The junction magnetoresistivity and domain phase transition were studied between ZnO and La0.4Gd0.1Sr0.5CoO3 thin films grown on LaAlO3 (100) substrates epitaxially by pulse laser deposit. The ferromagnetic transformation into…

The structural, magnetic and dielectric properties have been investigated in 3$d$-5$d$ based double perovskite Sr$_2$FeIrO$_6$ thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are…

Spintronics has gone through substantial progress due to its applications in energy-efficient memory, logic and unconventional computing paradigms. Multilayer ferromagnetic thin films are extensively studied for understanding the domain…

Metastable manganite perovskites displaying the antiferromagnetic so-called E-phase are predicted to be multiferroic. Due to the need of high-pressures for the synthesis of this phase, this prediction has only been confirmed in bulk HoMnO3.…

Phase change materials (PCMs) that exhibit volatile resistive switching are promising for emulating neuronal oscillators. Charge transfer insulators, such as ReNiO3 (where Re represents rare earth metals like Pr, Nd, Sm, Eu...), form a…

We investigate the polarity-dependent field-induced resistive switching phenomenon driven by electric pulses in perovskite oxides. Our data show that the switching is a common occurrence restricted to an interfacial layer between a…

The persistent and switchable polarization of ferroelectric materials based on HfO$_2$-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record…

We report a more than 10-fold enhancement of the piezoelectric coefficient $d_{33}$ of polycrystalline CH$_3$NH$_3$PbI$_3$ (MAPbI$_3$) films when interfacing them with ferroelectric PbZr$_{0.2}$Ti$_{0.8}$O$_3$ (PZT). Piezo-response force…

Thin films of perovskite manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ were grown epitaxially on various substrates by either the pulsed laser deposition method or laser molecular beam epitaxy. The substrates change both the volume and symmetry…

We studied the resistive memory switching in pulsed laser deposited amorphous LaHoO3 (LHO) thin films for non-volatile resistive random access memory (RRAM) applications. Nonpolar resistive switching (RS) was achieved in PtLHOPt memory…

Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…

In 1971 the memristor was originally postulated as a new non-linear circuit element relating the time integrals of current and voltage. More recently researchers at HPLabs have linked the theoretical memristor concept to resistance…

Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite…

By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric…

Perovskite oxides display correlated electrical, magnetic, and thermal properties that can be further tuned in the thin-film limit, making them contenders for next-generation electronics. Measuring thermal transport in thin films is…

We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance…

Interface-type resistive switching (RS) devices with lower operation current and more reliable switching repeatability exhibits great potential in the applications for data storage devices and ultra-low-energy computing. However, the…

Nanostructured La0.67Ca0.33MnO3 (NS-LCMO) was formed by pulsed-laser deposition on the surface of porous Al2O3. The resistance peak temperature (Tp) of the NS-LCMO increases with increasing average thickness of the films, while their Curie…