English
Related papers

Related papers: Mobility gap in intermediate valent TmSe

200 papers

In this paper, we have performed first principles calculations to study optoelectronic, thermodynamic and transport properties of Fe2TiGe using density functional theory (DFT). The semi-classical Boltzmann transport theory is used to…

Materials Science · Physics 2019-05-07 M. Anwar Hossain , M. A. Al Noman , Md. Taslimur Rahman

Thermoelectric power (TEP) is measured in bilayer graphene for various temperatures and charge-carrier densities. At low temperatures, measured TEP well follows the semiclassical Mott formula with a hyperbolic dispersion relation. TEP for a…

Mesoscale and Nanoscale Physics · Physics 2010-12-14 Seung-Geol Nam , Dong-Keun Ki , Hu-Jong Lee

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ…

Electronic transport in highly doped but still insulating silicon at low temperatures is dominated by hopping between localized states; it serves as a model system of a disordered solid for which the electronic interaction can be…

Strongly Correlated Electrons · Physics 2007-05-23 Marco Hering , Marc Scheffler , Martin Dressel , Hilbert v. Lohneysen

We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…

The temperature and electrical field dependent conductivity of n-type CdSe nanocrystal thin films is investigated. In the low electrical field regime, the conductivity follows G ~ exp(-(T*/T)^0.5) in the temperature range 10K<T<120K. At…

Materials Science · Physics 2009-11-10 Dong Yu , Congjun Wang , Brian L. Wehrenberg , Philippe Guyot-Sionnest

High mobility and dilute two-dimensional electron systems exhibit metallic behavior down to the lowest experimental temperatures. In studies of ionic liquid gated insulating silicon, we have observed transitions to a metallic state in low…

Mesoscale and Nanoscale Physics · Physics 2015-06-22 JJ Nelson , A. M. Goldman

We study a system composed of two quantum dots connected in series between two leads at different temperatures, in the limit of large intratomic repulsion. Using the non-crossing approximation, we calculate the spectral densities at both…

Mesoscale and Nanoscale Physics · Physics 2023-10-11 Diego Pérez Daroca , Pablo Roura-Bas , Armando A. Aligia

Electron-phonon (E-p) coupling incorporated density functional theory (DFT) based investigation of structural, electronic and vibrational properties of bulk MgSe and MgTe is presented. Electron-phonon coupling is incorporated to understand…

Materials Science · Physics 2024-11-19 Maitry Joshi , Trupti K Gajaria , Prafulla K. Jha

In this study, we conducted various magnetotransport measurements on Fe$_{1+y}$Te$_{1-x}$Se$_{x}$ single crystals from which excess iron was sufficiently removed. Our results revealed that crossover from the incoherent to the coherent…

SmB$_6$ exhibits a small (15-20 meV) bandgap at low temperatures due to hybridized $d$ and $f$ electrons, a tiny (3 meV) transport activation energy $(E_{A})$ above 4 K, and surface states accessible to transport below 2 K. We study its…

Strongly Correlated Electrons · Physics 2017-06-21 S. Wolgast , Y. S. Eo , K. Sun , Ç. Kurdak , F. F. Balakirev , M. Jaime , D. -J. Kim , Z. Fisk

With infrared spectroscopy we studied the bulk electronic properties of the topological antiferromagnet MnBi$_2$Te$_4$ with $T_N \simeq 25~\mathrm{K}$. With the support of band structure calculations, we assign the intra- and interband…

Our experimental studies of electron transport in wide (14 nm) HgTe quantum wells confirm persistence of a two-dimensional topological insulator state reported previously for narrower wells, where it was justified theoretically. Comparison…

Mesoscale and Nanoscale Physics · Physics 2015-06-24 E. B. Olshanetsky , Z. D. Kvon , G. M. Gusev , A. D. Levin , O. E. Raichev , N. N. Mikhailov , S. A. Dvoretsky

The superconducting phase of doped 1T-TiSe$_2$ is a fruitful playground for exploring exotic quantum phenomena such as the anomalous metal state and spontaneously formed superconducting network. Here, we address these emergent states by…

Superconductivity · Physics 2025-07-01 Jia-Yi Ji , Zongzheng Cao , Yi Hu , Haoyang Wu , Heng Wang , Yuying Zhu , Haiwen Liu , Lexian Yang , Qi-Kun Xue , Ding Zhang

Far-infrared reflectivity studies on the polycrystalline intermetallic compound MgB_2 with a superconducting transition temperature T_c=39 K were performed at temperatures 20 K to 300 K. We observe a significant raise of the…

TaTe$_4$ is a quasi-1D tetrachalcogenide that exhibits a CDW instability caused by a periodic lattice distortion. Recently, pressure-induced superconductivity has been achieved in this compound, revealing a competition between these…

We present our results of the effect of Fe intercalation on the structural, transport and magnetic properties of 1T-VSe2. Intercalation of iron, suppresses the 110K charge density wave (CDW) transition of the 1T-VSe2. For the higher…

Materials Science · Physics 2009-11-13 C. S. Yadav , A. K. Rastogi

We present the in-plane optical reflectance measurement on single crystals of URu$_2$As$_2$. The study revealed a strong temperature-dependent spectral evolution. Above 50 K, the low frequency optical conductivity is rather flat without a…

Superconductivity · Physics 2013-05-30 W. T. Guo , Z. G. Chen , T. J. Williams , J. D. Garrett , G. M. Luke , N. L. Wang

The conductance and thermoelectric power (TEP) of graphene is simultaneously measured using microfabricated heater and thermometer electrodes. The sign of the TEP changes across the charge neutrality point as the majority carrier density…

Mesoscale and Nanoscale Physics · Physics 2009-04-29 Yuri M. Zuev , Willy Chang , Philip Kim

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have drastically constrained the electrical performance of TMDSC…