Related papers: Molecular states in a one-electron double quantum …
We study coupled semiconductor quantum dots theoretically through a generalized Hubbard approach, where intra- and inter-dot Coulomb Correlation, as well as tunneling effects are described on the basis of realistic electron wavefunctions.…
We present an analytically solvable model of $P$ colinear, two-dimensional quantum dots, each containing two electrons. Inter-dot coupling via the electron-electron interaction gives rise to sets of entangled ground states. These ground…
We have measured the magnetization of a dual-subband two-dimensional electron gas, confined in a GaAs/AlGaAs heterojunction. In contrast to two-dimensional electron gases with a single subband, we observe non-1/B-periodic, triangularly…
Highly accurate closed-form approximations are given for the ground state and first excited state wavefunctions and energies for a nonrelativistic particle in a one-dimensional double square well potential with a square barrier in between…
A two-dimensional (2D) electron gas formed in a modulation-doped GaAs/AlGaAs single quantum well undergoes a first-order transition when the first excited subband is occupied with electrons, as the Fermi level is tuned into resonance with…
The magnetic character of the ground-state of two electrons on a double quantum dot, connected in series to left and right single-channel leads, is considered. By solving exactly for the spectrum of the two interacting electrons, it is…
We study the in-gap states of the quantum dot hybridized to a conducting and superconducting electrode. The usual proximity effect suppresses electronic states over the entire subgap regime $|\omega| < \Delta$, where $\Delta$ denotes the…
The localization of two interacting electrons in a coupled-quantum-dots semiconductor structure is demonstrated through numerical calculations of the time evolution of the two-electron wave function including the Coulomb interaction between…
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum…
We present a realization of two-qubit controlled-phase gate, based on the linear and nonlinear properties of the probe and signal optical pulses in an asymmetric GaAs/AlGaAs double quantum wells. It is shown that, in the presence of…
Two-dimensional electron gas coupled to adjacent impurity sites in high-frequency out-of-plane ac control electric field is investigated. Modification of tunneling rates as a function of the field amplitude is calculated. Nonlinear…
The quantum transport in a narrow channel (NC) is studied in the presence of a time-dependent delta-profile electric field. The electric field is taken to be transversely polarized, with frequency $\omega$, causing inter-subband and…
Numerical results are presented for transport properties of two coupled double-level quantum dots. The results strongly suggest that under appropriate circumstances the dots can develop a novel ferromagnetic (FM) correlation at…
We study the transport properties of a 2D electron gas in narrow GaAs quantum wells with AlAs/GaAs superlattice barriers. It is shown that the anisotropic positive magnetoresistance observed in selectively doped semiconductor structures in…
A tunable quantum point contact with modes occupied in both transverse directions is studied by magnetotransport experiments. We use conductance quantization of the one-dimensional subbands as a tool to determine the mode spectrum. A…
We report electronic transport measurements on two-dimensional electron gases in a Ga[Al]As heterostructure with an embedded layer of InAs self-assembled quantum dots. At high InAs dot densities, pronounced Altshuler-Aronov-Spivak…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
Inherent asymmetry in the tunneling barriers of few-electron quantum dots induces intrinsically different tunneling currents for forward and reverse source-drain biases in the non-linear transport regime. Here we show that in addition to…
We predict wide-band suppression of tunneling of spin-orbit-coupled atoms (or noninteracting Bose-Einstein condensate) in a double-well potential with periodically varying depths of the potential wells. The suppression of tunneling is…