Related papers: New Memory Concept for Superconducting Electronics
We report the fabrication of strongly coupled nanohybrid superconducting junctions using PbS semiconductor nanowires and Pb0.5In0.5 superconducting electrodes. The maximum supercurrent in the junction reaches up to ~15 \mu A at 0.3 K, which…
We propose an integrated nonlinear superconducting device based on a nanoelectromechanical shuttle. The system can be described as a qubit coupled to a bosonic mode. The topology of the circuit gives rise to an adjustable qubit/mechanical…
Superconducting circuits have attracted growing interest in recent years as a promising candidate for fault-tolerant quantum information processing. Extensive efforts have always been taken to completely shield these circuits from external…
We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon…
Microwave-to-optical quantum transducers will enable coherent interconnection between distant superconducting quantum devices. Ongoing explorations with several platforms have shown promising results at single-photon levels. However, in all…
Quantum memories, capable of controllably storing and releasing a photon, are a crucial component for quantum computers and quantum communications. So far, quantum memories have operated with bandwidths that limit data rates to MHz. Here we…
We develop a theory of percolation with plasticity systems (PWPs) rendering properties of interest for neuromorphic computing. Unlike the standard percolation between two large electrodes, they have multiple ($N\gg 1$) interfaces and…
Analog memory is of great importance in neurocomputing technologies field, but still remains difficult to implement. With emergence of memristors in VLSI technologies the idea of designing scalable analog data storage elements finds its…
We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by…
To increase density of superconductor digital and neuromorphic circuits by 10x and reach integration scale of $10^8$ Josephson junctions (JJs) per chip, we developed a new fabrication process on 200-mm wafers, using self-shunted…
The escalating energy demands of artificial intelligence pose a critical challenge to conventional computing. Leveraging the efficiency of event-driven, in-memory neuromorphic architectures into the superconducting circuits with ultra-high…
We report superconducting kinetic inductance memory (SKIM) element, which can be controlled exclusively by the bias supercurrent, without involving magnetic fields and heating elements. The SKIM is non-volatile memory. The device is made of…
Ferroelectric memories have attracted significant interest due to their non-volatile storage, energy efficiency, and fast operation, making them prime candidates for future memory technologies. As commercial Dynamic Random Access Memory…
The combination of superconducting and magnetic materials to create novel superconducting devices has been motivated by the discovery of Josephson critical current (Ics) oscillations as a function of magnetic layer thickness and the…
Recent progress in superconductor electronics fabrication has enabled single-flux-quantum (SFQ) digital circuits with close to one million Josephson junctions (JJs) on 1-cm$^2$ chips. Increasing the integration scale further is challenging…
With the goal of understanding the intricate behavior and dynamics of collections of neurons, we present superconducting circuits containing Josephson junctions that model biologically realistic neurons. These "Josephson junction neurons"…
Superconducting circuits offer tremendous design flexibility in the quantum regime culminating most recently in the demonstration of few qubit systems supposedly approaching the threshold for fault-tolerant quantum information processing.…
Scalability and performance of current flash memories can be improved substantially by replacing the floating poly-Si gate by a layer of Si dots. This multi-dot layer can be fabricated CMOS-compatibly in very thin gate oxide by ion beam…
At the end of Silicon roadmap, keeping the leakage power in tolerable limit and bridging the bandwidth gap between processor and memory have become some of the biggest challenges. Several promising Non-Volatile Memories (NVMs) such as,…
After nearly a decade of anticipation, scalable nonvolatile memory DIMMs are finally commercially available with the release of Intel's 3D XPoint DIMM. This new nonvolatile DIMM supports byte-granularity accesses with access times on the…