Related papers: Controlled single electron transfer between Si:P d…
We study the effect of mesoscopic fluctuations on the magnitude of errors that can occur in exchange operations on quantum dot spin-qubits. Mid-size double quantum dots, with an odd number of electrons in the range of a few tens in each…
A reliable route to the deterministic fabrication of impurity ion donors in silicon is required to advance quantum computing architectures based upon such systems. This paper reports the ability to dope isotopically-defined unique…
To analyze the state of injected carrier streams of different electron sources, we propose to use correlation measurements at a quantum point contact with the different sources connected via chiral edge states to the two inputs. In…
Background: Neutron transfer measurements for the $^{18}$O + $^{28}$Si system have shown that the experimental one-neutron and two-neutron transfer cross sections are well reproduced with spectroscopic amplitudes from two different shell…
We theoretically demonstrate that a dipole layer on the electrode can modulate the transmission properties of nanoscale devices by influencing the contact properties, through first principles simulations on carbon nanotube based field…
Efficient doping of semiconductor nanowires remains a major challenge towards the commercialization of nanowire-based devices. In this work we investigate the growth regimes and electrical properties of MBE-grown p- and n-type gallium…
We report on the realization of a few-electron double quantum dot defined in a two-dimensional electron gas by means of surface gates on top of a GaAs/AlGaAs heterostructure. Two quantum point contacts (QPCs) are placed in the vicinity of…
Hyperdoping consists of the intentional introduction of deep-level dopants into a semiconductor in excess of equilibrium concentrations. This causes a broadening of dopant energy levels into an intermediate band between the valence and…
We present a proposal for a fully electrically controllable quantum dot based spin current injector. The device consists of a quantum dot that is strongly coupled to a ferromagnetic electrode on one side and weakly coupled to a nonmagnetic…
We present transport measurements of the Kondo effect in a double quantum dot charged with only one or two electrons, respectively. For the one electron case we observe a surprising quasi-periodic oscillation of the Kondo conductance as a…
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and…
We use a double quantum dot as a frequency-tunable on-chip microwave detector to investigate the radiation from electron shot-noise in a near-by quantum point contact. The device is realized by monitoring the inelastic tunneling of…
We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron…
We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel…
Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hopping via individual…
To explain the effect of electron density saturation at high phosphorus concentrations the model of negatively charged phosphorus clusters was compared with the experimental data. A number of negatively charged clusters incorporating a…
By creating a sharp and dense dopant profile of phosphorus atoms buried within a silicon host, a two-dimensional electron gas is formed within the dopant region. Quantum confinement effects induced by reducing the thickness of the dopant…
The coherent time evolution of electrons in double quantum dots induced by fast bias-voltage switches is studied theoretically. As it was shown experimentally, such driven double quantum dots are potential devices for controlled…
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…
Interactions between atomic and molecular objects are to a large extent defined by the nanoscale electrostatic potentials which these objects produce. We introduce a scanning probe technique that enables three-dimensional imaging of local…