Related papers: Schottky-barrier induced spin dephasing in spin in…
We study the effects of electrostatic gating on the current-induced phenomena in ultrathin ferromagnet/heavy metal heterostructures. We utilize heterodyne detection and analysis of symmetry with respect to the direction of the magnetic…
We calculate the spin Hall conductivity driven by Rashba spin-orbit interaction in $p$-type two-dimensional semiconductors in the presence of a perpendicular magnetic field. For a highly confined quantum well, the system is described by a…
We consider spin polarized transport in a ferromagnet-insulator/semiconductor/insulator-ferromagnet (F1-I-S-I-F2) junction. We find that the spin current is strongly dependent on the spin configurations, the doping and space charge…
We investigate quantum interference effects with magnetic field (magnetofingerprints) in strongly disordered Au-nanobridges. The magnetofingerprints are unconventional because they are caused by the Zeeman effect, not by the Aharonov-Bohm…
We develop a non-perturbative numerical method to study tunneling of a single electron through an Aharonov-Bohm ring where several strongly interacting electrons are bound. Inelastic processes and spin-flip scattering are taken into…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We describe degenerate square spin as an ensemble of magnetic monopoles coupled via an emergent entropic field that subsumes the effect of the underlying spin vacuum. We compute their effective free energy, entropic interaction,…
The first-order Fermi acceleration of electrons requires an injection of electrons into a mildly relativistic energy range. However, the mechanism of injection has remained a puzzle both in theory and observation. We present direct evidence…
Current-induced magnetic domain wall motion, induced by transfer of spin transfer effect due to exchange interaction, is expected to be useful for next generation high-density storages. We here show that efficient domain wall manipulation…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…
Based on a Monte Carlo method, we investigate the influence of transport conditions on the electron spin relaxation in GaAs. The decay of initial electron spin polarization is calculated as a function of distance under the presence of…
We demonstrate that the magnetization in magnetic semiconductors exhibits nutational motion when subjected to an external magnetic field. This behavior originates from the splitting of the conduction-electron band which induces anisotropic,…
Spin-orbit (SO) interactions in two dimensional systems split the Fermi surface, and allow for the spatial separation of spin-states via transverse magnetic focusing (TMF). In this work, we consider the case of combined Rashba and Zeeman…
A model with both Rashba and Dresselhaus spin orbit (SO) couplings and Hubbard electron-electron interaction is studied on planar strips at quarter filling at zero temperature in the clean limit. In the absence of Hubbard repulsion and at…
We show that pronounced modulations in spin and charge densities can be induced by the insertion of a single hole in an otherwise half-filled 2-leg Hubbard ladder. Accompanied with these modulations is a loosely bound structure of the doped…
The electrical injection of spin polarized electrons in a semiconductor can be achieved in principle by driving a current from a ferromagnetic metal, where current is known to be significantly spin polarized, into the semiconductor via…
We present the quantum phase diagram of mesoscopic SQUID array. We predict different quan- tum phases and the phase boundaries along with several special points. We present the results of magnetic flux induced dissipation on these points…
We show that the efficiency of manipulating electron spin in semiconductor quantum wells can be enhanced by tuning the strain strength. The effect combining intrinsic and strain-induced spin splitting varies for different systems, which…
We generalize a Landauer-type formula, using a real$\otimes$spin-space Green function technique, to treat spin-dependent transport in quantum-coherent conductors attached to two ferromagnetic contacts. The formalism is employed to study the…
We present the analytical result of the expectation value of spin resulting from an injected spin polarized electron into a semi-infinitely extended 2DEG plane with [001] growth geometry via ideal quantum point contact. Both the Rashba and…