Related papers: An Accurate Method for Measuring Activation Energy
This paper reports on the demonstration of a high-rate energy measurement technique using a thin depletion layer silicon avalanche photodiode (Si-APD). A dedicated amplitude-to-time converter is developed to realize simultaneous energy and…
We derive theoretically an exact relation between Tan's universal contact and the photo-excitation rate of a strongly interacting Fermi gas, in the case of optically transferring fermionic pairs to a more tightly bound molecular state. Our…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
Current and future experiments need to know the stopping power of liquid argon. It is used directly in calibration, where commonly the minimum-ionizing portion of muon tracks is used as a standard candle. Similarly, muon range is used as a…
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors. Pulsed IV measurements established increasing electron velocities with decreasing…
In this paper we present a method of scintillation detector energy calibration using the gamma-rays. The technique is based on the Compton scattering of gamma-rays in a scintillation detector and subsequent photoelectric absorption of the…
Defect centers in GaN emerge as bright sources of single-photons which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation…
We report on the unambiguous detection of Auger electrons by electron emission spectroscopy from a cesiated InGaN/GaN light emitting diode (LED) under electrical injection. Electron emission spectra were measured as a function of the…
We measure transport through a Ga[Al]As heterostructure at temperatures between 0.1 K and 30 K. Increasing the temperature enhances the electron-electron scattering rate and viscous effects in the two-dimensional electron gas arise. To…
Adopting the hypothesis that the nonthermal emission of Active Galactic Nuclei (AGN) is primarily due to the acceleration of protons, we construct a simple model in which the interplay of acceleration and losses can be studied together with…
Thermal photons can provide information on the temperature of the new state of matter created at RHIC. In the p_T region of 1--3 GeV/c thermal photons are expected to be the dominant direct photon source. Therefore, a possible excess…
We describe Raman spectroscopy based method of measuring thermal conductivity of thin films, and review significant results achieved with this technique pertinent to graphene and other two-dimensional materials. The optothermal Raman method…
A technically simple and physically clear method is suggested for the direct measurement of brightness temperature of two-dimensional electron gas (2DEG) in the channel of a high electron mobility transistor (HEMT). The usage of the method…
We study the dynamical phase transition out of an excitonic insulator phase after photo-excitation using a time-dependent extension of the selfconsistent GW method. We connect the evolution of the photoemission spectra to the dynamics of…
This paper presents a novel method to estimate the power consumption of distinct active components on an electronic carrier board by using thermal imaging. The components and the board can be made of heterogeneous material such as plastic,…
We measure the temperature of a 2D electron gas in GaAs from the thermopower of a one-dimensional ballistic constriction, using the Mott relation to confirm the calibration from the electrical conductance. Under hot electron conditions,…
Avalanche photodiodes (APDs) are promising light sensor for various fields of experimental physics. It has been argued, however, that variation of APD gain with temperature could be a serious problem preventing APDs from replacing…
The photoluminescence spectra of band-edge transitions in GaN is studied as a function of temperature. The parameters that describe the temperature dependence red-shift of the band-edge transition energy and the broadening of emission line…
We present an experimental investigation of band-gap shrinkage in n-type GaN using photoluminescence spectroscopy, as a function of electron concentration and temperature. The observed systematic shift of the band-to-band transition energy…
Ultrafast light-matter interaction has emerged as a powerful tool to control and probe the macroscopic properties of functional materials, especially two-dimensional transition metal dichalcogenides which can form different structural…