Related papers: Angular Dependence of Spin-Torque Critical Current…
In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical…
Substantial understanding of spin-orbit interactions in heavy-metal (HM)/ferromagnet (FM) heterostructures is crucial in developing spin-orbit torque (SOT) spintronics devices utilizing spin Hall and Rashba effects. Though the study of SOT…
We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…
We theoretically investigate the switching of a perpendicular magnetic layer by in-plane charge current due to the spin Hall effect. We find that, in the high damping regime, the threshold switching current is independent of the damping…
We develop and study theoretically a minimal model of semiconductor nanowire Josephson junction that incorporates Zeeman and spin-orbit effects. The DC Josephson current is evaluated from the phase-dependent energies of Andreev levels. Upon…
Terahertz spintronics offers the prospect of devices which are both faster and more energy-efficient. A promising route to achieve this goal is to exploit current-induced spin-orbit torques. However, the high-frequency properties of these…
Voltage-gate assisted spin-orbit torque (VGSOT) writing scheme combines the advantages from voltage control of magnetic anisotropy (VCMA) and spin-orbit torque (SOT) effects, enabling multiple benefits for magnetic random access memory…
We formulate a theory of the AC spin Hall magnetoresistance (SMR) in a bilayer system consisting of a magnetic insulator such as yttrium iron garnet (YIG) and a heavy metal such as platinum (Pt). We derive expressions for the DC voltage…
We theoretically investigate current-induced magnetization dynamics in chiral-lattice helimagnets. Spin-orbit coupling in non-centrosymmetric crystals induces a reactive spin-transfer torque that has not been previously considered. We…
The obtained periodic magnetic-field dependencies of the critical current, measured in opposite directions on asymmetric superconducting aluminum rings, allow to explain observed earlier quantum oscillations of a dc voltage as a result of…
Spin nematic phase is a phase of frustrated quantum magnets with a quadrupolar order of electron spins. Since the spin nematic order is usually masked in experimentally accessible quantities, it is important to develop a methodology for…
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an…
We present a theoretical analysis of the nonlinear bias and temperature dependence of current-voltage characteristics of a spin-valve device which is formed by connecting a quantum dot to two ferromagnetic electrodes whose magnetic moments…
Spin currents are used to write information in magnetic random access memory (MRAM) devices by switching the magnetization direction of one of the ferromagnetic electrodes of a magnetic tunnel junction (MTJ) nanopillar. Different physical…
Stochastic magnetic tunnel junctions (s-MTJ) is a promising component of probabilistic bit (p-bit), which plays a pivotal role in probabilistic computers. For a standard cell structure of the p-bit, s-MTJ is desired to be insensitive to…
We study the angular dependence of ferromagnetic resonance (FMR) in Ni$_{36}$Fe$_{64}$ wires using both traditional microwave-absorption and electrical-detection techniques. In our experiments we apply a static magnetic field at an angle…
Dependence of the thermally assisted spin torque switching probability on the sweep electric current was investigated theoretically. The analytical expressions of the switching times for $b=1$ and $b=2$ are derived based on the rate…
There exists a significant challenge in developing efficient magnetic tunnel junctions with low write currents for non-volatile memory devices. With the aim of analysing potential materials for efficient current-operated magnetic junctions…
We analyze the interplay between disorder and band structure in current perpendicular to the planes (CPP) giant magnetoresistance (GMR). We consider finite magnetic multilayers attached to pure crystalline leads, described by a…
Time-dependent Thermoremanent Magnetization (TRM) studies have been instrumental in probing energy dynamics within the spin glass phase. In this paper, we will review the evolution of the TRM experiment over the last half century and…