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Related papers: Extracting contact effects in organic field-effect…

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Contact resistances often contribute significantly to the overall device resistance in organic field-effect transistors (OFETs). Understanding charge injection at the metal-organic interface is critical to optimizing OFET device…

Materials Science · Physics 2009-11-11 D. Natelson , B. H. Hamadani , J. W. Ciszek , D. A. Corley , J. M. Tour

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting…

Disordered Systems and Neural Networks · Physics 2007-05-23 B. H. Hamadani , D. Natelson

Contact resistances between organic semiconductors and metals can dominate the transport properties of electronic devices incorporating such materials. We report measurements of the parasitic contact resistance and the true channel…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 B. H. Hamadani , D. Natelson

Organic light emitting field effect transistors (OLEFETs) with bilayer structures have been widely studied due to their potential to integrate high-mobility organic transistors and efficient organic light emitting diodes. However, these…

Understanding charge transport in organic semiconductors in large electric fields is relevant to many applications. We present transport measurements in organic field-effect transistors based on poly(3-hexylthiophene) and…

Materials Science · Physics 2010-03-09 J. H. Worne , J. E. Anthony , D. Natelson

Recent experiments have demonstrated that the performances of organic FETs strongly depend on the dielectric properties of the gate insulator. In particular, it has been shown that the temperature dependence of the mobility evolves from a…

Strongly Correlated Electrons · Physics 2009-11-13 S. Fratini , A. F. Morpurgo , S. Ciuchi

Multiterminal measurements have typically been employed to examine electronic properties of strongly correlated electronic materials such as transition metal oxides without the influence of contact effects. In contrast, in this work we…

Strongly Correlated Electrons · Physics 2010-12-01 A. A. Fursina , R. G. S. Sofin , I. V. Shvets , D. Natelson

Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical…

The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…

Mesoscale and Nanoscale Physics · Physics 2019-02-20 Filippo Giubileo , Antonio Di Bartolomeo

Vertical field effect transistors (VOFETs) can offer short channel architecture which can further enhance the performance at low operating voltages which makes it more viable for organic electronics applications. VOFETs can be prepared with…

Applied Physics · Physics 2023-01-24 Ramesh Singh Bisht , Pramod Kumar

The conductivity of organic semiconductors is measured {\it in-situ} and continuously with a bottom contact configuration, as a function of film thickness at various gate voltages. The depletion layer thickness can be directly determined as…

Materials Science · Physics 2009-11-10 Manabu Kiguchi , Manabu Nakayama , Toshihiro Shimada , Koichiro Saiki

Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of…

Applied Physics · Physics 2020-09-24 Anibal Pacheco-Sanchez , Pedro C. Feijoo , David Jiménez

The modulus spectra of organic field-effect transistors (OFETs) with electrode overlap and peripheral regions have been experimentally and theoretically investigated. The complex impedance of regioregular poly(3-hexylthiophene-2,5-diyl)…

Applied Physics · Physics 2020-01-14 Yu Suenaga , Takashi Nagase , Takashi Kobayashi , Hiroyoshi Naito

A small-signal equivalent circuit for graphene field-effect transistors is proposed considering the explicit contribution of effects at the metal-graphene interfaces by means of contact resistances. A methodology to separate the contact…

In recent years, thin-film organic field-effect transistors (OFETs) have begun to be considered as a possible alternative to the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFT's) used in active matrix flat panel displays…

The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing…

Mesoscale and Nanoscale Physics · Physics 2022-06-02 Anibal Pacheco-Sanchez , Nikolaos Mavredakis , Pedro C. Feijoo , David Jiménez

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…

Other Condensed Matter · Physics 2009-11-11 H. Houili , J. D. Picon , M. N. Bussac , L. Zuppiroli

A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and…

We have studied charge injection across the metal/organic semiconductor interface in bottom-contact poly(3-hexylthiophene) (P3HT) field-effect transistors, with Au source and drain electrodes modified by self-assembled monolayers (SAMs)…

Materials Science · Physics 2007-05-23 B. H. Hamadani , D. A. Corley , J. W. Ciszek , J. M. Tour , D. Natelson

We measure hole transport in poly(3-hexylthiophene) field effect transistors with channel lengths from 3 $\mu$m down to 200 nm, from room temperature down to 10 K. Near room temperature effective mobilities inferred from linear regime…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 B. H. Hamadani , D. Natelson
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