Related papers: Simulation of Si:P spin-based quantum computer arc…
Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and…
The ability to control single dopants in solid-state devices has opened the way towards reliable quantum computation schemes. In this perspective it is essential to understand the impact of interfaces and electric fields, inherent to…
Fault-tolerant modular quantum computing requires stabilizer measurements across the modules in a quantum network. For this, entangled states of high quality and rate must be distributed. Currently, two main types of entanglement…
Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial…
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a…
We consider various exchange-driven electronic instabilities in semiconductor double-layer systems in the absence of any external magnetic field. We establish that there is no exchange-driven bilayer to monolayer charge transfer instability…
Capacitance-Voltage (C-V) & Ballistic Current- Voltage (I-V) characteristics of Double Gate (DG) Silicon-on- Insulator (SOI) Flexible FETs having sub 35nm dimensions are obtained by self-consistent method using coupled Schrodinger- Poisson…
We report a new computational model for simulations of electromagnetic interactions with semiconductor quantum well(s) (SQW) in complex electromagnetic geometries using the finite difference time domain (FDTD) method. The presented model is…
The backscattering process of injected electrons on exchange-splitted levels of quantum well (QW) in ferromagnetic metal / insulator / semiconductor heterostructure is studied. It is found that, if one of the exchange-splitted levels lies…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
The construction of quantum computer simulators requires advanced software which can capture the most significant characteristics of the quantum behavior and quantum states of qubits in such systems. Additionally, one needs to provide valid…
A design for a large-scale surface code quantum processor based on a node/network approach is introduced for semiconductor quantum dot spin qubits. The minimal node contains only 7 quantum dots, and nodes are separated on the micron scale,…
Gateable semiconductor quantum dots (QDs) provide a versatile platform for analog quantum simulations of electronic many-body systems. In particular, QD arrays offer a natural representation of the interacting $\pi$-electron system of small…
The valley degree of freedom in the electronic band structure of silicon, graphene, and other materials is often considered to be an obstacle for quantum computing (QC) based on electron spins in quantum dots. Here we show that control over…
Continuously parameterized two-qubit gates are a key feature of state-of-the-art trapped-ion quantum processors as they have favorable error scalings and show distinct improvements in circuit performance over more restricted maximally…
Arrays of dopants in silicon are promising platforms for the quantum simulation of the Fermi-Hubbard model. We show that the simplest model with only on-site interaction is insufficient to describe the physics of an array of phosphorous…
In the "flopping-mode" regime of electron spin resonance, a single electron confined in a double quantum dot is electrically driven in the presence of a magnetic field gradient. The increased dipole moment of the charge in the flopping mode…
We investigate the phonon-induced decoherence and dissipation in a donor-based charge quantum bit realized by the orbital states of an electron shared by two dopant ions which are implanted in a silicon host crystal. The dopant ions are…
With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum…
We present a variational method to calculate the exchange interactions among donor clusters in a semiconductor. Such clusters are candidates for a so-called control-qubit architecture for quantum information, where the effective exchange…