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This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…

Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and…

Zinc oxide (ZnO) films having various thicknesses were synthesized on sapphire substrates by thermal oxidation of Zn-metallic films in air ambient. X-ray diffraction (XRD) spectra indicate that the resulting films possess a polycrystalline…

Materials Science · Physics 2012-01-23 J. C. Moore , L. R. Covington , R. Stansell

First-principles calculations based on density functional theory have been carried out to understand the mechanism of fabricating As-doped p-type ZnO semiconductors. It has been confirmed that AsZn-2VZn complex is the most plausible…

Materials Science · Physics 2013-05-20 Chol-Jun Yu , Yong-Guk Choe , Son-Guk Ri , Myong-Il Kim , Song-Jin Im

We present research results on the electronic transport in heterostructures based on p-type nickel oxide (NiO) with the n-type oxide semiconductors zinc oxide (ZnO) and cadmium oxide (CdO). NiO is a desirable candidate for application in…

The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate…

Applied Physics · Physics 2020-05-05 Wen Gu , Yi Lu , Rongyu Lin , Wenzhe Guo , Zi-Hui Zhang , Jae-Hyun Ryou , Jianchang Yan , Junxi Wang , Jinmin Li , Xiaohang Li

Previous luminescence and absorption experiments in Co-doped ZnO revealed two ionization and one intrashell transition of $d(\textrm{Co}^{2+})$ electrons. Those optical properties are analyzed within the generalized gradient approximation…

Materials Science · Physics 2019-05-22 A. Ciechan , P. Bogusławski

Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low…

Materials Science · Physics 2023-08-14 Simran Arora , Subhabrata Dhar

In this work we develop a simple theory for the green photoluminescence of ZnO quantum dots (QDs) that allows us to understand and rationalize several experimental findings on fundamental grounds. We calculate the spectrum of light emitted…

Optics · Physics 2018-04-11 R. Carmina Monreal , S. Peter Apell , Tomasz J. Antosiewicz

We report on low temperature photoluminescence (PL) and EPR study of bulk polycrystalline ZnO . Variation of peak position of donor bound exciton transition (D1XA) and FXAn=1-1LO with pump intensity show red shift and blue shift…

Materials Science · Physics 2012-02-29 Sanjiv Kumar Tiwari

We have grown nitrogen-doped ZnO films grown by two kinds of epitaxial methods on lattice-matched ScAlMgO$_4$ substrates. We measured the photoluminescence (PL) of the two kinds of ZnO:N layers in the donor-acceptor-pair transition region.…

Materials Science · Physics 2009-11-11 Takayuki Makino , A. Tsukazaki , A. Ohtomo , M. Kawasaki , H. Koinuma

An approach is presented to modify the WF of solution-processed sol-gel derived ZnOover an exceptionally wide range of more than 2.3 eV. This approach relies on the formation of dense and homogeneous self-assembled monolayers based on…

Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance…

Applied Physics · Physics 2019-07-24 Igor A. Khramtsov , Dmitry Yu. Fedyanin

In this paper, we report a novel photovoltaic phenomenon in a low cost manganite/ZnO p-n heterojunction grown on ITO glass substrate by pulsed laser depositon (PLD) under relative low growth temperature. The heterostructure…

Materials Science · Physics 2012-08-31 Jiaqi Zhang , Keke Huang , Xiaotian Yang , Wenzhe Si , Xiaofeng Wu , Yanyan Du , Gang Cheng , Shouhua Feng

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on the carrier concentration, radiative recombination, and…

In this work, nonlinear optical properties of Na: ZnO thin films (Na: ZnO) have been experimentally elaborated. The principal possibility to operate the nonlinear optical features using external laser beams is shown. The Na: ZnO films were…

ZnO nanoparticles (NP) of size less than around 20 nm inside a chamber exhibits complete reduction in their visible photoluminescence (PL) intensity when partial pressure of oxygen in the surrounding gaseous environment is decreased by…

Materials Science · Physics 2010-08-18 Manoranjan Ghosh , R S Ningthoujam , R. K. Vatsa , D. Das , V. Nataraju , S. K. Gupta , D. Bahadur

Electron Holographic Tomography was used to obtain 3-dimensional reconstructions of the morphology and electrostatic potential gradient of axial GaInP/InP nanowire tunnel diodes. Crystal growth was carried out in two opposite directions:…

In conventional electrides, excess electrons are localized in crystal voids to serve as anions. Most of these electrides are metallic and the metal cations are primarily from the s-block, d-block, or rare-earth elements. Here, we report a…

Materials Science · Physics 2025-03-05 Jiaqi Dai , Feng Yang , Cong Wang , Fei Pang , Zhihai Cheng , Wei Ji

We report interesting observations in 1.2 MeV Ar8+ ion irradiated ZnO which, to the best of our knowledge, have not been published earlier and will be useful for the scientific community engaged in research on ZnO. Irradiation with the…