The undoped BAlN electron-blocking layer (EBL) is investigated to replace the conventional AlGaN EBL in light-emitting diodes (LEDs). Numerical studies of the impact of variously doped EBLs on the output characteristics of LEDs demonstrate that the LED performance shows heavy dependence on the p-doping level in the case of the AlGaN EBL, while it shows less dependence on the p-doping level for the BAlN EBL. As a result, we propose an undoped BAlN EBL for LEDs to avoid the p-doping issues, which a major technical challenge in the AlGaN EBL. Without doping, the proposed BAlN EBL structure still possesses a superior capacity in blocking electrons and improving hole injection compared with the AlGaN EBL having high doping. This study provides a feasible route to addressing electron leakage and insufficient hole injection issues when designing UV LED structures.
@article{arxiv.2005.00929,
title = {BAlN for III-nitride UV light emitting diodes: undoped electron blocking layer},
author = {Wen Gu and Yi Lu and Rongyu Lin and Wenzhe Guo and Zi-Hui Zhang and Jae-Hyun Ryou and Jianchang Yan and Junxi Wang and Jinmin Li and Xiaohang Li},
journal= {arXiv preprint arXiv:2005.00929},
year = {2020}
}