Related papers: Weak localization effects in granular metals
We present low-temperature transport measurements of a gate-tunable thin film topological insulator system that features high mobility and low carrier density. Upon gate tuning to a regime around the charge neutrality point, we infer an…
Weak localization in graphene is studied as a function of carrier density in the range from 1 x $10^{11}$\,cm$^{-2}$ to 1.43 x $10^{13}$\,cm$^{-2}$ using devices produced by epitaxial growth onto SiC and CVD growth on thin metal film. The…
Theory of quantum corrections to conductivity of granular metal films is developed for the realistic case of large randomly distributed tunnel conductances. Quantum fluctuations of intergrain voltages (at energies E much below bare charging…
The conductance of disordered wires with symplectic symmetry is studied by a random-matrix approach. It has been shown that the behavior of the conductance in the long-wire limit crucially depends on whether the number of conducting…
We reexamine the problem of delocalization of two-dimensional electrons in the presence of random magnetic field. By introducing spatial correlations among random fluxes, a well-defined metal-insulator transition characterized by a…
Low temperature zero-bias conductance through two side-coupled quantum dots is investigated using Wilson's numerical renormalization group technique. A low-temperature phase diagram is computed. Near the particle-hole symmetric point…
Since the prediction of spin-gapless semiconducting behaviour in the Heusler compound Mn$_2$CoAl, evidence of spin-gapless behaviour in thin films has typically been inferred from magnetotransport measurements. The spin gapless state is…
We consider the correction $\Delta\sigma_\mathrm{ee}$ due to electron-electron interaction to the conductivity of a weakly disordered metal (Al'tshuler-Aronov correction). The correction is related to the spectral determinant of the Laplace…
We obtain analytic expressions for the conductivity of pristine (pure) graphene in the framework of the Dirac model using the polarization tensor in (2+1)-dimensions defined along the real frequency axis. It is found that at both zero and…
We have studied the zero magnetic field resistivity of unique high- mobility two-dimensional electron system in silicon. At very low electron density (but higher than some sample-dependent critical value, $n_{cr}\sim 10^{11}$ cm$^{-2}$),…
It is well known that conductivity of disordered metals is suppressed in the limit of low frequencies and temperatures by quantum corrections. Although predicted by theory to exist up to much higher energies, such corrections have so far…
We develop a microscopic theory of the weak localization of two-dimensional massless Dirac fermions which is valid in the whole range of classically weak magnetic fields. The theory is applied to calculate magnetoresistance caused by the…
A detailed comparison is presented of the temperature dependence of the conductivity of dilute, strongly interacting electrons in two-dimensional silicon inversion layers in the metallic regime in the presence and in the absence of a…
Weak localization leads to the same correction to both the conductivity and the electron-phonon coupling constant $\lambda$ (and $\lambda_{tr}$). Consequently the temperature dependence of the (thermal) electrical resistivity is decreasing…
We study the effect of superconducting fluctuations on the conductivity of metals at arbitrary temperatures $T$ and impurity scattering rates $\tau^{-1}$. Using the standard diagrammatic technique but in the Keldysh representation, we…
Magnetism is a prototypical phenomenon of quantum collective state, and has found ubiquitous applications in semiconductor technologies such as dynamic random access memory (DRAM). In conventional materials, it typically arises from the…
We suggest that negative magnetoresistance in small magnetic fields at temperatures lower than 3 K reported in the paper under discussion may be related to superconducting transition in In leads (with Tc = 3.4 K).
The magnetoresistance associated with quantum interference corrections in a high mobility, gated InGaAs/InP quantum well structure is studied as a function of temperature, gate voltage, and angle of the tilted magnetic field. Particular…
We investigate the suppression of the superconducting transition temperature due to Coulomb repulsion in granular metallic systems at large tunneling conductance between the grains, $g_{T}\gg 1$. We find the correction to the…
We describe the effects of phase coherence on transport and thermodynamic properties of a disordered conducting network. In analogy with weak-localization correction, we calculate the phase coherence contribution to the magnetic response of…