Related papers: Phonon-assisted tunneling in an isolated double do…
Phonon-assisted luminescence is a key property of defect centers in semiconductors, and can be measured to perform the readout of the information stored in a quantum bit, or to detect temperature variations. The investigation of…
We calculate the scattering rates of phonons on two-level systems in disordered trigonal and hexagonal crystals. We apply a model in which the two-level system, characterized by a direction in space, is coupled to the strain field of the…
Hybrid graphene-topological insulator (TI) devices were fabricated using a mechanical transfer method and studied via electronic transport. Devices consisting of bilayer graphene (BLG) under the TI Bi$_2$Se$_3$ exhibit differential…
The inelastic electron tunneling spectrum (IETS)of highly oriented pyrolitic graphite (HOPG) has been measured with scanning tunneling spectroscopy (STS) at 6K. The observed spectral features are in very good agreement with the vibrational…
Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a…
In this work, using the scattering matrix method, we have investigated the transmission coefficients and the thermal conductivity in a double-bend waveguide structure. The transmission coefficients show strong resonances due to the…
Strain tuning is a powerful experimental method in probing correlated electron systems. Here we study the strain response of the lattice dynamics and electronic structure in semiconductor Ta$_2$NiS$_5$ by polarization-resolved Raman…
We report on non-adiabatic transport through a double quantum dot under irradiation of surface acoustic waves generated on-chip. At low excitation powers, absorption and emission of single and multiple phonons is observed. At higher power,…
Problems of pulse excitation in an acoustic waveguide with a flexible wall and in an acoustic half-space with a flexible wall are studied. In both cases the flexible wall is described by a thin plate equation. The solutions are written as…
Resonance-assisted tunneling is investigated within the framework of one-dimensional integrable systems. We present a systematic recipe, based on Hamiltonian normal forms, to construct one-dimensional integrable models that exhibit…
Phonon polaritons (PhPs) in freestanding and supported multilayers (MuLs) of hexagonal boron nitride (hBN) are systematically studied using a macroscopic optical-phonon model. The PhP properties such as confinement, group velocity,…
We present measurements of the rates for an electron to tunnel on and off a quantum dot, obtained using a quantum point contact charge sensor. The tunnel rates show exponential dependence on drain-source bias and plunger gate voltages. The…
The probabilities of tunnel ionization of particles confined by one-dimensional power-law and logarithmic potentials are calculated for constant and low-frequency electric fields.
Confined polar optical phonons are studied in a semiconductor double heterostructure (SDH) by means of a generalization of a theory developed some years ago and based on a continuous medium model. The treatment considers the coupling of…
We have theoretically investigated the properties of electronic transport in graphene heterostructures, which are consisted of two different graphene superlattices with one-dimensional periodic potentials. It is found that such…
A new manifestation of interlayer coherence in strongly polarized double layer quantum Hall systems with total filling factor $\nu=1$ in the presence of a small or zero tunneling is theoretically predicted. It is shown that moving (for…
Electronic transport in a carbon nanotube (CNT) metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the non-equilibrium Green's functions method with the account of electron-phonon scattering. For MOSFETs,…
We investigate the experimental control of pair tunneling in a double-well potential using Floquet engineering. We demonstrate a crossover from a regime with density-assisted tunneling to dominant pair tunneling by tuning the effective…
We provide a detailed study of the interface Trap Assisted Tunneling (TAT) mechanism in tunnel field effect transistors to show how it contributes a major leakage current path before the Band To Band Tunneling (BTBT) is initiated. With a…
The assisted tunneling of a wave packet between square one dimensional barriers is treated analytically. The tunneling rate is calculated exactly for a potential mimicking a constant electric field with arbitrary time dependence. The pole…