Related papers: Phonon-assisted tunneling in an isolated double do…
In a uniform ring-shaped one-dimensional superfluid, quantum fluctuations that unwind the order parameter need to transfer momentum to quasiparticles (phonons). We present a detailed calculation of the leading exponential factor governing…
Tunneling two-level systems are ubiquitous in amorphous solids, and form a major source of noise in systems such as nano-mechanical oscillators, single electron transistors, and superconducting qubits. Occurance of defect tunneling despite…
The new generation of planar Penning traps promises to be a flexible and versatile tool for quantum information studies. Here, we propose a fully controllable and reversible way to change the typical trapping harmonic potential into a…
Periodic driving of quantum dots is analyzed as a basis for developing dynamic switching devices. We study transport through periodically modulated energy levels which are coupled to leads via tunneling coefficients. Utilizing Floquet…
The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE.…
We find an interference effect for electron-phonon interactions in coupled semiconductor quantum dots that can dominate the nonlinear transport properties even for temperatures close to zero. The intradot electron tunnel process leads to a…
We study theoretically phonon-assisted relaxation and inelastic tunneling of holes in a double quantum dot. We derive hole states and relaxation rates from kp Hamiltonians and show that there is a finite distance between the dots where…
We report both photon- and phonon-assisted tunneling transitions in a linear array of three quantum dots, which can only be understood by considering the full three-dimensionality of the charge stability diagram. Such tunneling transitions…
Based on exactly mapping of a many-body electron-phonon interaction problem onto a one-body problem, we apply the well-established nonequilibrium Green function technique to solve the time-dependent phonon-assisted tunneling at low…
We consider the fractional drag in a double layer system of two-dimensional electrons in the half-filled lowest Landau level. At sufficiently large inter-layer separations the drag is dominated by exchange of acoustic phonons and exhibits…
A method for measuring the degree of spin polarization of magnetic materials based on spin-dependent resonant tunneling is proposed. The device we consider is a ballistic double-barrier resonant structure consisting of a ferromagnetic layer…
Direct and phonon-assisted tunneling currents in InAlGaAs-InGaAs bulk and double quantum well interband tunnel heterojunctions are simulated rigorously using the non-equilibrium Green's function formalism for coherent and dissipative…
We show that singlet-triplet superpositions of two-electron spin states in a double quantum dot undergo a phonon-induced pure dephasing which relies only on the tunnel coupling between the dots and on the Pauli exclusion principle. As such,…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
An electron-phonon cavity consisting of a quantum dot embedded in a free-standing GaAs/AlGaAs membrane is characterized in Coulomb blockade measurements at low temperatures. We find a complete suppression of single electron tunneling around…
The study of phonon coupling in doped semiconductors via electrical transport measurements is challenging due to unwanted temperature-induced effects such as dopant ionisation and parallel conduction. Here, we study phonon scattering in 2D…
We introduce a simple, solvable model of double-barrier resonant tunneling structure which includes the effects of electron-electron and electron-phonon scattering. The model is based on a generalized effective-mass equation where a…
Magnetoelectric properties of the spin-valve-type tunnel junction of Ta(5\ nm)/Ni$_{79}$Fe$_{21}$ (25 nm)/Ir$_{22}$Mn$_{78}$ (10 nm)/Co$_{75}$Fe$_{25}$ (4 nm)/Al (0.8 nm)-oxide/Co$_{75}$Fe$_{25}$ (4 nm)/Ni$_{79}$Fe$_{21}$ (20 nm)/Ta (5 nm)…
We study tunnel junctions consisting of a two-dimensional ferroelectric (FE) material sandwiched between graphene electrodes. We formulate a theory for the interplay of the FE polarization and induced free charges in such devices, taking…
We present evidence that tunneling processes in near-integrable systems are enhanced due to the manifestation of nonlinear resonances and their respective island chains in phase space. A semiclassical description of this…