Related papers: Adjustable spin torque in magnetic tunnel junction…
Power consumption is the main limitation in the development of new high performance random access memory for portable electronic devices. Magnetic RAM (MRAM) with CoFeB/MgO based magnetic tunnel junctions (MTJs) is a promising candidate for…
We report on our theoretical study of the inverse TMR effect in the spin polarized transport through a narrow channel. In the weak tunneling limit, we find the ordinary positive TMR. The TMR changes its sign as the transmission probability…
The study of the effects of scaling on magnetic tunnel junction (MTJ) devices has become an important topic in the field of spin-based memory devices. Here, we investigate the effect of elastic dephasing on trilayer and pentalayer MTJ…
We demonstrate that an all-antiferromagnetic tunnel junction with current perpendicular to the plane geometry can be used as an efficient spintronics device with potential high frequency operation. By using state-of-the-art density…
Modulation of a spin-torque oscillator (STO) signal based on a magnetic tunnel junction (MTJ) with perpendicularly magnetized free layer is investigated. Magnetic field inductive loop was created during MTJ fabrication process, which…
In this paper, we attempt the theoretical modeling of the magnetic tunnel junctions with embedded magnetic and nonmagnetic nanoparticles (NPs). A few abnormal tunnel magnetoresistance (TMR) effects, observed in related experiments, can be…
The transport properties of magnetic tunnel junctions (MTJs) are very sensitive to interface modifications. In this work we investigate both experimentally and theoretically the effect of asymmetric barrier modifications on the bias…
Nanoscale magnetic tunnel junction plays a pivotal role in magnetoresistive random access memories. Successful implementation depends on a simultaneous achievement of low switching current for the magnetization switching by spin-transfer…
The magnetic tunnel junctions (MTJ) based on van der Waals (vdW) materials possess atomically smooth interfaces with minimal element intermixing. This characteristic ensures that spin polarization is well maintained during transport,…
The large-scale fabrication of three-terminal magnetic tunnel junctions (MTJs) with high yield is becoming increasingly crucial, especially with the growing interest in spin-orbit torque (SOT) magnetic random access memory (MRAM) as the…
Domain-wall memory (DWM) has SRAM class access performance, low energy, high endurance, high density, and CMOS compatibility. Recently, shift reliability and processing-using-memory (PuM) proposals developed a need to count the number of…
The discovery of the spin torque effect has made magnetic nanodevices realistic candidates for active elements of memory devices and applications. Magnetoresistive effects allow the read-out of increasingly small magnetic bits, and the spin…
We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the…
Spin transport in magnetic tunnel junctions in the presence of spin diffusion is considered theoretically. Combining ballistic tunneling across the barrier and diffusive transport in the electrodes, we solve the spin dynamics equation in…
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
Spin transfer in asymmetric Co/Cu/Co bilayer magnetic nanopillars junctions has been studied at low temperature as a function of free-layer thickness. The phase diagram for current-induced magnetic excitations has been determined for…
Magnetic torques generated through spin-orbit coupling promise energy-efficient spintronic devices. It is important for applications to control these torques so that they switch films with perpendicular magnetizations without an external…
Pinning at local defects is a significant road block for the successful implementation of technological paradigms which rely on the dynamic properties of non-trivial magnetic textures. In this report a comprehensive study of the influence…
Straintronic magneto-tunneling junction (s-MTJ) switches, whose resistances are controlled with voltage-generated strain in the magnetostrictive free layer of the MTJ, are extremely energy-efficient switches that would dissipate a few aJ of…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…