Related papers: A controllable nanomechanical memory element
This article reviews efforts to build a new type of quantum device, which combines an ensemble of electronic spins with long coherence times, and a small-scale superconducting quantum processor. The goal is to store over long times…
With the development of novel computing schemes working at cryogenic temperatures, superconducting memory elements have become essential. In this context, superconducting quantum interference devices (SQUIDs) are promising candidates, as…
Design of a doubly-clamped beam structure capable of localizing mechanical and optical energy at the nanoscale is presented. The optical design is based upon photonic crystal concepts in which patterning of a nanoscale-cross-section beam…
Structured, periodic optical materials can be used to form photonic crystals capable of dispersing, routing, and trapping light. A similar phenomena in periodic elastic structures can be used to manipulate mechanical vibrations. Here we…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…
A tungsten filament immersed in superfluid helium has strong hysteretic $I$-$V$ characteristics. By increasing the applied voltage, a remarkable current drop occurs at a transition voltage, at which the filament enters a non-ohmic hot state…
Solid-state programmable metallization cells have attracted considerable attention as memristive elements for Redox-based Resistive Random Access Memory (ReRAM) for low-power and low-voltage applications. In principle, liquid-state…
Dynamical structural defects exist naturally in a wide variety of solids. They fluctuate temporally, and hence can deteriorate the performance of many electronic devices. Thus far, the entities of such dynamic objects have been identified…
Optomechanical devices sensitively transduce and actuate motion of nanomechanical structures using light. Single--crystal diamond promises to improve the performance of optomechanical devices, while also providing opportunities to interface…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
Phase change memory (PCM) relies on a reversible transition between amorphous and crystalline states of a material, and stands as a promising candidate for next-generation, energy-efficient data storage and neuromorphic hardware. Here, we…
We have realized a nano-electromechanical hybrid system consisting of a silicon nitride beam dielectrically coupled to a superconducting microwave resonator. We characterize the sample by making use of the Duffing nonlinearity of the…
I review the advancements of atomic scale nanoelectronics towards quantum neuromorphics. First, I summarize the key properties of elementary combinations of few neurons, namely long-- and short--term plasticity, spike-timing dependent…
We show that the state of a flying qubit may be transferred to a chain of identical, (near) ferromagnetically polarised, but non-interacting, static spin-1/2 particles in a passive way. During this process the flying qubit is coherently…
We present a silicon optomechanical nanobeam design with a dynamically tunable acoustic mode at 10.2 GHz. The resonance frequency can be shifted by 90 kHz/V^2 with an on-chip capacitor that was optimized to exert forces up to 1 $\mu$N at 10…
Resistive switching memories allow electrical control of the conductivity of a material, by inducing a high resistance (OFF) or a low resistance (ON) state, using electrochemical and ion transport processes. As alternative to high…
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory,…
Phase-change memory (PCM), a promising candidate for next-generation non-volatile memories, exploits quenched glassy and thermodynamically stable crystalline states as reversibly switchable state variables. We demonstrate PCM functions…
Dynamic reconfiguration of charge carriers in confined ion-channels under electrical stimulation produces memory effects, where the internal resistance depends on history of the electric field. Vermiculite nanofluidic devices harness this…
In our earlier work [Appl. Phys. Lett. 92, 022509 (2008)], we proposed nonvolatile vortex random access memory (VRAM) based on the energetically stable twofold ground state of vortex-core magnetizations as information carrier. Here we…