Related papers: Antiferromagnetic s-d exchange coupling in GaMnAs
In zero magnetic field, conductance measurements of clean one-dimensional (1D) constrictions defined in GaAs/AlGaAs heterostructures show twenty-six quantized ballistic plateaux, as well as a structure close to $0.7(2e^2/h)$. In an in-plane…
The critical filling factor v_c where Shubnikov-de Haas oscillations become spin split is investigated for a set of GaAs-GaAlAs heterojunctions. Finite temperature magnetoresistance measurements are used to extract the value of v_c at zero…
Growth of GaMnAs by molecular beam epitaxy is typically performed at low substrate temperatures (250C) and high As overpressures leading to the incorporation of excess As and Mn interstitials, which quench optical signals such as…
The metal-insulator transition within the s-d exchange model is studied by the Dynamical Mean Field Theory and Dual Fermion approaches. The latter takes into account nonlocal correlation effects which are shown to be essential. In…
The electronic structures of Mn-doped zincblende GaAs and wurtzite GaN are calculated using both standard local-density functional theory (LSDA), and a novel pseudopotential self-interaction-corrected approach (pseudo-SIC), able to account…
The mechanism for the ferromagnetic order of (Ga,Mn)As and (Ga,Mn)N is extensively studied over a vast range of Mn concentrations. We calculate the electronic structures of these materials using density functional theory in both the local…
After two decades from the discovery of ferromagnetism in Mn-doped GaAs, its origin is still debated, and many doubts are related to the electronic structure. Here we report an experimental and theoretical study of the valence electron…
It is well known that the kinetic exchange interaction between single-occupied magnetic orbitals (s-s) is always antiferromagnetic, while between single- and double-occupied orbitals (s-d) is always ferromagnetic and much weaker. Here we…
Voltage control of ferromagnetism on the nanometer scale is highly appealing for the development of novel electronic devices. Here a key challenge is to implement and combine low power consumption, high operation speed, reliable…
We study the magnetic phases of two coupled two-dimensional electron gases in order to determine under what circumstances these phases may occur in real semiconductor quantum wells and what the experimental properties of the broken-symmetry…
We use the many techniques of alloy theory to study antiferromagnetic NiO, considered as an alloy of spin-up and spin-down Ni atoms. The questions are: the true antiferromagnetic ground state and the possibility of obtaining ferrimagnetic…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Magnetic doping of semiconductor nanostructures is actively pursued for applications in magnetic memory and spin-based electronics. Central to these efforts is a drive to control the interaction strength between carriers (electrons and…
We employ the dynamical mean field approximation to perform a systematic study of magnetism in Ga_{1-x}Mn_xAs. Our model incorporates the effects of the strong spin-orbit coupling on the J=3/2 GaAs valence bands and of the exchange…
We calculate the electronic band dispersion of graphene monolayer on a two dimensional transition metal dichalcogenide substrate (GTMD) (viz., XY2 , X = Mo, W; Y = S, Se) around K and K prime points taking into account the interplay of the…
Inelastic neutron scattering reveals strong spin fluctuations with energies as high as 0.4eV in the nearly antiferromagnetic metal Cr$_{0.95}$V$_{0.05}$. The magnetic response is well described by a modified Millis-Monien-Pines function.…
We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x<0.06, infrared absorption and photoconductivity spectra indicate the presence of a Mn impurity band which is not merged with…
We present a theory for electronic and magneto-optical properties of n-type In(1-x)Mn(x)As magnetic alloy semiconductors in a high magnetic field, B. We use an 8-band Pidgeon-Brown model generalized to include the wavevector (Kz) dependence…
Through magneto-transport measurements and analysis of the observed Shubnikov de Haas oscillations in (010) (AlxGa1-x)2O3/Ga2O3 heterostructures, spin-splitting of the Landau levels in the (010) Ga2O3 two-dimensional electron gas (2DEG) has…
A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin…