Related papers: High-Performance Carbon Nanotube Field-Effect Tran…

The electrical characteristics of a carbon nanotube can be significantly modified by applying elastic strain. This study focuses on exploring this phenomenon in a single-walled carbon nanotube (SWNT) using tight-binding transport…

Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10^9…

The sensitive conductance change of semiconductor nanowires and carbon nanotubes in response to binding of charged molecules provide a novel sensing modality which is generally denoted as nanoFET sensors. In this paper, we study the scaling…

Electronic transport properties of carbon nanotubes are studied theoretically in the presence of external electric field E(t) by using the Boltzmann's transport with constant relaxation time. An analytical expression for the current…

Difficulties in obtaining high-performance p-type transistors and gate insulator charge-trapping effects present two major challenges for III-V complementary metal-oxide semiconductor (CMOS) electronics. We report a p-GaAs nanowire…

High electric conductivity ~100 MegaSiemens/m and Seebeck coefficient >200 mkV/K of carbon nanotubes (CNT) make them attractive for a variety of applications. Unfortunately, a high thermal conductivity ~ 3000 W/(m*K) due to the phonon…

We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale…

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on…

Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…

Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…

As conventional silicon technology is approaching its fundamental material and physical limits with continuous scaling, there is a growing push to look for new platform to design memory circuits for nanoelectronic applications. In this…

Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…

Dissipation is ubiquitous in quantum systems, and its interplay with fluctuations is critical to maintaining quantum coherence. We experimentally investigate the dissipation dynamics in single-walled carbon nanotubes coupled to…

The p-n junction diode and field-effect transistor (FET) are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these…

A mechanism of stimulated emission of electromagnetic radiation by an electron beam in carbon nanotubes is theoretically considered. Three basic properties of carbon nanotubes, a strong slowing down of surface electromagnetic waves,…

We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap of ~0.14 eV. Contrary to prior observations of disordered…

We report the capacitive spring softening effect observed in single-walled carbon nanotube (SWNT) nanoelectromechanical (NEM) resonators. The nanotube resonators adopt dual-gate configuration with both bottom-gate and side-gate capable of…

As the conventional silicon metal-oxide-semiconductor field-effect transistor (MOSFET) approaches its scaling limits; many novel device structures are being extensively explored. Among them, the silicon nanowire transistor (SNWT) has…

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…

Building smaller transistors with enhanced functionality is critical in extending the limits of Moores law and meeting the demands of the electronics industry. Here we demonstrate transistor operation in a suspended single carbon nanotube…