Related papers: High mobility two-dimensional electron system on h…
Ferroelectric field-effect transistors (FeFET) with two-dimensional (2D) semiconductor channels are promising low-power, embedded non-volatile memory (NVM) candidates for next-generation in-memory computing. However, the performance of…
For an electron density near the H=0 insulator-to-conductor transition, the magnetoconductivity of the low-temperature conducting phase in high-mobility silicon MOSFETs is consistent with the form…
We report the fabrication of both n-type and p-type WSe2 field effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated graphene contacts. Our transport measurements reveal intrinsic channel properties…
We report field-effect transistors (FETs) with single-crystal molybdenum disulfide (MoS2) channels synthesized by chemical vapor deposition (CVD). For a bilayer MoS2 FET, the mobility is ~17 cm2V-1s-1 and the on/off current ratio is ~108,…
Two dimensional electron gases (2DEGs) formed at the interfaces of oxide heterostructures draw considerable interest owing to their unique physics and potential applications. Growing such heterostructures on conventional semiconductors has…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…
We adopt a stochastic approach to study the charge transport in transistors. In this approach, the hole and electron densities are ruled by diffusion-reaction stochastic partial differential equations satisfying local detailed balance…
We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…
Two-dimensional (2D) layered materials-based field-effect transistors (FETs) are promising for ultimate scaled electron device applications because of the improved electrostatics to atomically thin body thickness. However, compared with the…
We show that the negative electronic compressibility of two-dimensional electronic systems at sufficiently low density enables the generation of charge density waves through the application of a uniform force field, provided no current is…
Ignited by the discovery of the metal-insulator transition, the behaviour of low-disorder two-dimensional (2D) electron systems is currently the focus of a great deal of attention. In the strongly-interacting limit, electrons are expected…
The temperature dependence of conductivity $\sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density…
We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface…
We report a first principles study of the structure and the vibrational properties of the Si(100)-H(2 \times 1) surface in an electric field. The calculated vibrational parameters are used to model the vibrational modes in the presence of…
We report on the fabrication and characterization of single-crystal organic p-type field-effect transistors (OFETs) with the field-effect hole mobility mu \~ 8 cm2/Vs, substantially higher than that observed in thin-film OFETs. The…
The spatial structure of the transition region between an insulator and an electrolyte solution was studied with x-ray scattering.The electron density profile across the n-hexane/silica sol interface (solutions with 5-nm, 7-nm, and 12-nm…
We present a contactless method that is capable of characterizing a high electron mobility transistor heterostructure at the wafer stage, right after its growth, before any production process has been attempted, to provide the equilibrium…
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…
The carrier mobility \mu of few-layer graphene (FLG) field-effect transistors increases ten-fold when the SiO_2 substrate is replaced by single-crystal epitaxial Pb(Zr_0.2Ti_0.8)O_3 (PZT). In the electron-only regime of the FLG, \mu reaches…