Related papers: Metallic behavior in Si/SiGe 2D electron systems
Half-metallic ferromagnets show 100% spin-polarization at the Fermi level and are ideal candidates for spintronic applications. Despite the extensive research in the field, very few materials have been discovered so far. Here we present…
We calculate the interaction kernel K for two-dimensional diffusive electrons. The screening of the Coulomb interaction together with the Fermi statistics induces a spin selection rule for electron-electron scattering so that in leading…
We studied the weak field Hall voltage in 2D electron layers in Si-MOS structures with different mobilities, through the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, we have…
We study the electrical conductivity in a nodal-line semimetal with charged impurities. The screening of the Coulomb potential in this system is qualitatively different from what is found in conventional metals or semiconductors, with the…
The effect of substrate bias and surface gate voltage on the low temperature resistivity of a Si-MOSFET is studied for electron concentrations where the resistivity increases with increasing temperature. This technique offers two degrees of…
Electrons confined to two dimensions display an unexpected diversity of behaviors as they are cooled to absolute zero. Noninteracting electrons are predicted to eventually "localize" into an insulating ground state, and it has long been…
We investigate the behavior of the thermoelectric power [S] in disordered systems close to the Anderson-type metal-insulator transition [MIT] at low temperatures. In the literature, we find contradictory results for S. It is either argued…
We report experimental results of low temperature magnetotransport in high mobility 2D electron systems exposed to radiation up to 20GHz frequency using a simple dipole configuration. Magnetoresistance oscillations are observed as in…
Huge values of high field magnetoresistance have been recently reported in large arrays of CoFe nanoparticles embedded in an organic insulating lattice in the Coulomb blockade regime. An unusual exponential decrease of magnetoresistance…
We investigated the magnetotransport in high quality ferromagnetic (Ga,Mn)As films and wires. At low temperature the conductivity decreases with decreasing temperature without saturation down to 20 mK. Here we show, that the conductivity…
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the…
We report the results of an experimental study of the magnetoresistance $\rho_{xx}$ and $\rho_{xy}$ in two samples of $p$-Si/SiGe with low carrier concentrations $p$=8.2$\times10^{10}$ cm$^{-2}$ and $p$=2$\times10^{11}$ cm$^{-2}$. The…
We theoretically study transport properties of a two-dimensional electron system on a hydrogen-passivated Si(111) surface in the field-effect-transistor (FET) configuration. We calculate the density and temperature dependent mobility and…
The temperature dependence of dark conductivity at low temperatures (300-15 K) was studied on a wide microstructural range of well-characterized highly crystallized single phase undoped microcrystalline silicon samples. Our study reveals…
We study the low-temperature behavior of a magnetic impurity which is weakly coupled to correlated conduction electrons. To account for conduction electron interactions a diagrammatic approach in the frame of the 1/N expansion is developed.…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
We studied the drag resistivity between dilute two-dimensional hole systems, near the apparent metal-insulator transition. We find the deviations from the $T^{2}$ dependence of the drag to be independent of layer spacing and correlated with…
Detailed studies of the magnetoresistance of alpha-(ET)2KHg(SCN)4 and alpha-(ET)2TlHg(SCN)4 as a function of temperature, magnetic field strength, and field orientation are reported. Below 15 K, the temperature dependence of the…
The lecture introduces a reader to the relatively young field of physics of strongly interacting and disordered 2D electron system, in particular, to the phenomena of the metallic conduction and the apparent metal-insulator transition in…
Weak field Hall resistance Rxy(T) of the 2D electron system in Si was measured over the range of temperatures 1-35 K and densities, where the diagonal resistivity exhibits a ``metallic'' behavior. The Rxy(T) dependence was found to be…