Related papers: Oxygen stoichiometry and instability in aluminium …
We report scanning tunneling microscopy and ballistic electron emission microscopy studies of the electronic states of the uncovered and chemisorbed-oxygen covered surface of AlOx tunnel barrier layers. These states change when chemisorbed…
The structural and nanochemical properties of thin $AlO_x$ layers are decisive for the performance of advanced electronic devices. For example, they are frequently used as tunnel barriers in Josephson junction-based superconducting devices.…
We demonstrate that at the usual 1E-7 torr range of base pressures in the sputtering chamber, X-ray photoelectron spectroscopy shows the existence of a thin AlOx layer at the Nb/Al interface in both Nb/Al-AlOx/Pb tunnel junctions and Nb/Al…
We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures…
We show that less than 10% of the barrier area dominates the electron tunneling in state-of-art Al/AlOx/Al Josephson junctions. They have been studied by transmission electron microscopy, specifically using atomic resolution annular dark…
Metal-Insulator-Metal tunnel junctions (MIMTJ) are common throughout the microelectronics industry. The industry standard AlOx tunnel barrier, formed through oxygen diffusion into an Al wetting layer, is plagued by internal defects and…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
We have investigated planar metal - insulator - metal tunnel junctions with aluminum oxide as dielectricum. These oxide barriers were grown on an aluminum electrode in pure oxygen at room temperature till saturation. We observed discrete…
High quality Nb-based superconductor-insulator-superconductor (SIS) junctions with Al oxide (AlO$_x$) tunnel barriers grown from Al overlayers are widely reported in the literature. However, the thin barriers required for high critical…
Aluminium oxide (AlO$_\mathrm{x}$) tunnel junctions are important components in a range of nanoelectric devices including superconducting qubits where they can be used as Josephson junctions. While many improvements in the reproducibility…
We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of magnitude. Both ultra high vacuum and high vacuum fabricated…
We report a room temperature tunneling anisotropic magnetoresistance in Co/Al2O3/NiFe junctions containing magnetic electrodes oxidized prior to forming the Al2O3 layer. A significant change in a tunnel magnetoresistance is observed when…
We study from first principles the transport properties of Al/AlOx/Al tunnel junctions. On this basis, we analyze the reliability of two analytical models for the conductance, namely the trapezoid potential barrier model and a tight-binding…
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction's set switching…
Combination of electric fields and Joule self-heating is used to change the oxygen stoichiometry and promote oxygen vacancy drift in a free-standing $\mathrm{(La,Sr)MnO_3}$ thin film microbridge placed in controlled atmosphere. By…
We report on a computational study of the clean and oxygen-covered Rh(110) surface, based on density-functional theory within the local-density approximation. We have used plane-wave basis sets and Vanderbilt ultra-soft pseudopotentials.…
Memristors based on a double barrier design have been analysed by various nano spectroscopic methods to unveil details about its microstructure and conduction mechanism. The device consists of an AlOx tunnel barrier and a NbOy/Au Schottky…
We demonstrate the tunability of oxygen content in pulsed laser deposition (PLD)-grown barium stannate (BaSn$O_3$, BSO) thin films by precisely controlling the background oxygen pressure over a broad range from 0.0004 mbar to 0.13 mbar. The…
We present a computational study of the adhesive and structural properties of the Al/Al2O3 interfaces as building blocks of the Metal-Insulator-Metal (MIM) tunnel devices, where electron transport is accomplished via tunnelling mechanism…
High critical current-density (10 to 420 kA/cm^2) superconductor-insulator-superconductor tunnel junctions with aluminium nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated…