Related papers: Temperature dependent weak field Hall resistance i…

Through Sr and Ca doping to the La sites, we successfully obtained the hole doped La$_{3-x}$A$_x$Ni$_2$O$_7$ (A = Sr and Ca) thin films by using the pulsed-laser deposition technique. Temperature dependent resistivity shows an upturn at low…

We consider a transmission of electrons through a two-dimensional ballistic point contact in the low-conductance regime below the 0.7-anomaly. The scattering of electrons by Friedel oscillations of charge density results in a contribution…

Using quantum gas microscopy we study the late-time effective hydrodynamics of an isolated cold-atom Fermi-Hubbard system subject to an external linear potential (a "tilt"). The tilt is along one of the principal directions of the…

We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems. We find that the oscillation amplitude decays exponentially with increasing temperature, as…

Heterodyne polarometry is used to measure the frequency dependence in the mid IR from 900 to 1100 cm$^-1$ and temperature dependence from 35 to 330 K of the normal state Hall transport in single crystal, optimally doped…

Optical and Hall-effect measurements have been performed on single crystals of Pb$_{0.77}$Sn$_{0.23}$Se, a IV-VI mixed chalcogenide. The temperature dependent (10--300 K) reflectance was measured over 40--7000 cm$^{-1}$ (5--870 meV) with an…

We calculate the resistivity of 2D electron (hole) gas, taking into account the degeneracy and the thermal correction due to the combined Peltier and Seebeck effects. The resistivity is found to be universal function of temperature,…

The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature…

An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can…

The temperature effect of quantum interference on resistivity is examined in monolayer graphene, with experimental results showing that the amplitude of the conductance fluctuation increases as temperature decreases. We find that this…

We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…

Charge transport plays a crucial role in manifold potential applications of two-dimensional materials, including field effect transistors, solar cells, and transparent conductors. At most operating temperatures, charge transport is hindered…

We provide the first observation of weak localization in high carrier density two-dimensional electron gas in AlInN/GaN heterostructures; at low temperatures and low fields the conductivity increases with increasing magnetic field. Weak…

Interest in ZrTe5 has been reinvigorated in recent years owing to its potential for hosting versatile topological electronic states and intriguing experimental discoveries. However, the mechanism of many of its unusual transport behaviors…

A system of electrons in two dimensions and strong magnetic fields can be tuned to create a gapped 2D system with one dimensional channels along the edge. Interactions among these edge modes can lead to independent transport of charge and…

A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum…

We have measured the temperature (0.1 <= T <= 15 K) and magnetic field (0 <= B <= 12 T) dependences of longitudinal and Hall resistivities for the p-Ge_0.93Si_0.07/Ge multilayers with different Ge layer widths 10 <= d_w <= 38 nm and hole…

Dwell time for a two state particle tunneling through a noisy thermal magnetic barrier has been calculated by studying the time evolution of the system. The effect of temperature has been included by averaging over the environmental…

The 2D models of heat capacity, its conductivity ($\kappa$), Hall resistance ($R_H$) and the Lorenz ratio ($\mathcal{L}$) have been derived using the ionization energy ($E_I$) based Fermi-Dirac statistics (iFDS). These models reproduce the…

The Hall effect and resistivity of the carrier doped magnetic semiconductor Fe$_{1-x}$Co$_x$S$_2$ were measured for $0\le x \le 0.16$, temperatures between 0.05 and 300 K, and fields of up to 9 T. Our Hall data indicate electron charge…