Related papers: Diode effect in magnetic tunnel junctions
We theoretically investigate a possible idea to introduce magnetic impurities to a superfluid Fermi gas. In the presence of population imbalance ($N_\uparrow>N_\downarrow$, where $N_\sigma$ is the number of Fermi atoms with pseudospin…
We analyze the electrical characteristics of a circuit consisting of a free thin-film magnetic layer and source and drain electrodes that have opposite magnetization orientations along the free magnet's two hard directions. We find that…
Magnetic tunnel junctions (MTJs) with conventional bulk ferromagnets separated by a nonmagnetic insulating layer are key building blocks in spintronics for magnetic sensors and memory. A radically different approach of using atomically-thin…
Electron transport through fully depleted ferroelectric tunnel barriers sandwiched between two metal electrodes and its dependence on ferroelectric polarization direction are investigated. The model assumes a polarization direction…
We report on tunnelling magnetoresistance (TMR), current-voltage (IV) characteristics and low frequency noise in epitaxially grown Fe(110)/MgO(111)/Fe(110) magnetic tunnel junctions (MTJs) with dimensions from 2x2 to 20x20 um2. The…
In this work we have analysed the deterimental effect on conductance caused by diffusion of hydrogen atoms in interstitial voids during fabrication process of magnesium oxide barrier of an Fe MgO Fe magnetic tunnel junction, using first…
Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < $t_{MgO}$ < 1.05 nm) is studied using the spin-torque diode effect. The application of…
We experimentally investigate the structural, magnetic and electrical transport properties of La$_{0.67}$Sr$_{0.33}$MnO$_{3}$ based magnetic tunnel junctions with a SrSnO$_3$ barrier. Our results show that despite the large number of…
Tunneling between two-dimensional electron layers with mutually correlated disorder potentials is studied theoretically. Due to this correlation, the diffusive eigenstates in different layers are almost orthogonal to each other. As a…
We present a theoretical study of electronic states in magnetic and nonmagnetic semiconductor quantum wires. The effects of chemical and magnetic disorder at paramagnetic temperatures are investigated in single-site coherent potential…
We study the nonlinear conductance through a quantum dot, specifically its dependence on the asymmetries in the tunnel couplings and bias voltages $V$, at low energies. Extending the microscopic Fermi-liquid theory for the Anderson impurity…
Using first-principles quantum-transport calculations, we investigate spin-dependent electronic and transport properties of antiferromagnetic tunnel junctions (AFMTJs) that consist of (110)-oriented antiferromagnetic (AFM) metal RuO$_{2}$…
We study the proximity effect in hybrid structures consisting of superconductor and ferromagnetic insulator separated by a normal diffusive metal (S/N/FI structures). These stuctures were proposed to realize the absolute spin-valve effect.…
Antiferromagnetic (AF) spintronics is merit on ultra-high operator speed and stability in the presence of magnetic field. To fully use the merit, the device should be pure rather than hybrid with ferromagnet or ferrimagnet. For the…
Impurity-induced quasiparticle bound states on a pair-breaking surface of a d-wave superconductor are theoretically described, taking into account hybridization of impurity- and surface-induced Andreev states. Further a theory for effects…
Processes which flip the spin of an electron tunneling in a junction made up of magnetic electrodes are studied. It is found that: i) Magnetic impurities give a contribution which increases the resistance and lowers the magnetoresistance,…
We consider the effects of magnetic impurities on the surface of superconducting Cu doped $Bi_{2}Se_{3}$ in the odd parity pairing phase which support topologically protected Majorana fermions surface states with linear spectrum. We show…
We measure the current vs voltage (I-V) characteristics of a diodelike tunnel junction consisting of a sharp metallic tip placed at a variable distance d from a planar collector and emitting electrons via electric-field assisted emission.…
Current-voltage characteristics and $P-E$ loops are simulated in SrRuO$_{3}$/BaTiO$_{3}$/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier…
In nearly antiferromagnetic (AF) metals such as high-Tc superconductors (HTSC's), a single nonmagnetic impurity frequently causes nontrivial widespread change of the electronic states. To elucidate this long-standing issue, we study a…