Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions
Materials Science
2015-06-23 v1 Mesoscale and Nanoscale Physics
Abstract
Current-voltage characteristics and loops are simulated in SrRuO/BaTiO/Pt tunneling junctions with interfacial dead layer. The unswitchable interfacial polarization is coupled with the screen charge and the barrier polarization self-consistently within the Thomas-Fermi model and the Landau-Devonshire theory. The shift of P-E loop from the center position and the unequal values of the positive coercive field and the negative coercive field are found, which are induced by the asymmetricity of interface dipoles. A complete J-V curve of the junction is shown for different barrier thickness, and the effect of the magnitude of interfacial polarization on the tunneling current is also investigated.
Cite
@article{arxiv.1409.7913,
title = {Interfacial dead layer effects on current-voltage characteristics in asymmetric ferroelectric tunnel junctions},
author = {Ping Sun and Yin-Zhong Wu and Su-Hua Zhu and Tian-Yi Cai and Sheng Ju},
journal= {arXiv preprint arXiv:1409.7913},
year = {2015}
}